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C. Schoenenberger

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cond-mat.mes-hall cond-mat.supr-con

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preprint2014arXiv

Carbon nanotube quantum dots on hexagonal boron nitride

We report the fabrication details and low-temperature characteristics of the first carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.

preprint2013arXiv

Fabrication and characterisation of nanospintronic devices

We report an improved fabrication scheme for carbon based nanospintronic devices and demonstrate the necessity for a careful data analysis to investigate the fundamental physical mechanisms leading to magnetoresistance. The processing with a low-density polymer and an optimised recipe allows us to improve the electrical, magnetic and structural quality of ferromagnetic Permalloy contacts on lateral carbon nanotube (CNT) quantum dot spin valve devices, with comparable results for thermal and sputter deposition of the material. We show that spintronic nanostructures require an extended data analysis, since the magnetisation can affect all characteristic parameters of the conductance features and lead to seemingly anomalous spin transport. In addition, we report measurements on CNT quantum dot spin valves that seem not to be compatible with the orthodox theories for spin transport in such structures.

preprint2010arXiv

Permalloy-based carbon nanotube spin-valve

In this Letter we demonstrate that Permalloy (Py), a widely used Ni/Fe alloy, forms contacts to carbon nanotubes (CNTs) that meet the requirements for the injection and detection of spin-polarized currents in carbon-based spintronic devices. We establish the material quality and magnetization properties of Py strips in the shape of suitable electrical contacts and find a sharp magnetization switching tunable by geometry in the anisotropic magnetoresistance (AMR) of a single strip at cryogenic temperatures. In addition, we show that Py contacts couple strongly to CNTs, comparable to Pd contacts, thereby forming CNT quantum dots at low temperatures. These results form the basis for a Py-based CNT spin-valve exhibiting very sharp resistance switchings in the tunneling magnetoresistance, which directly correspond to the magnetization reversals in the individual contacts observed in AMR experiments.

preprint2009arXiv

Magnetic field and contact resistance dependence of non-local charge imbalance

Crossed Andreev reflection (CAR) in metallic nanostructures, a possible basis for solid-state electron entangler devices, is usually investigated by detecting non-local voltages in multi-terminal superconductor/normal metal devices. This task is difficult because other subgap processes may mask the effects of CAR. One of these processes is the generation of charge imbalance (CI) and the diffusion of non-equilibrium quasi-particles in the superconductor. Here we demonstrate a characteristic dependence of non-local CI on a magnetic field applied parallel to the superconducting wire, which can be understood by a generalization of the standard description of CI to non-local experiments. These results can be used to distinguish CAR and CI and to extract CI relaxation times in superconducting nanostructures. In addition, we investigate the dependence of non-local CI on the resistance of the injector and detector contacts and demonstrate a quantitative agreement with a recent theory using only material and junction characteristics extracted from separate direct measurements.

preprint2001arXiv

Multi-wall carbon nanotubes as quantum dots

We have measured the differential conductance dI/dV of individual multi-wall carbon nanotubes (MWNT) of different lengths. A cross-over from wire-like (long tubes) to dot-like (short tubes) behavior is observed. dI/dV is dominated by random conductance fluctuations (UCF) in long MWNT devices (L=2...7 $μm$), while Coulomb blockade and energy level quantization are observed in short ones (L=300 nm). The electron levels of short MWNT dots are nearly four-fold degenerate (including spin) and their evolution in magnetic field (Zeeman splitting) agrees with a g-factor of 2. In zero magnetic field the sequential filling of states evolves with spin S according to S=0 -> 1/2 -> 0... In addition, a Kondo enhancement of the conductance is observed when the number of electrons on the tube is odd.

preprint2000arXiv

The Electrochemical Carbon Nanotube Field-Effect Transistor

We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy shifts of order +/- 1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage the NTs are hole doped in air with E_F ? 0.3-0.5 eV, corresponding to a doping level of ? 10^{13} cm^{-2}. Hole-doping increases in the electrolyte. This hole doping (oxidation) is most likely caused by the adsorption of oxygen in air and cations in the electrolyte.