Researcher profile

C. S. Li

C. S. Li contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2010arXiv

Deposition of La2Zr2O7 Film by Chemical Solution Deposition

La2Zr2O7 (LZO) formation of bulk powders and of films by Chemical Solution Deposition (CSD) process have been studied using propionates. The treatment involved a one step cycle in the reducing forming gas (Ar-5%H2) to be compatible with Ni-5at%W RABITS. Large amount of residual carbon was found in LZO powders formed in these conditions (10 wt %). The volume fraction of the cube texture in LZO films on Ni-5at%w RABITS was found to be a function of the speed of the gas flown above sample. This phenomenon is discussed in considering the C deposited from the carbon-containing gases emitted during the pyrolysis of the precursor. Using proper conditions (950 ^\circC and the speed of gas of 6.8\times10^{-2} m/s), LZO films with good surface crystallinity could be obtained on Ni-5at%W RABITS as demonstrated by X-ray diffraction, electron backscattered diffraction and RHEED. The existence of residual carbon in oxide films is a common question to films deposited by CSD processes under reducing condition.

preprint2010arXiv

Multi-seeded melt growth (MSMG) of bulk Y-Ba-Cu-O using thin-film seeds

Y-Ba-Cu-O (YBCO) and Sm-Ba-Cu-O (SmBCO) thin films have been used for the first time as heterogeneous seeds to multi-seed successfully the melt growth of bulk YBCO in a multi-seeded melt growth (MSMG) process. The use of thin film seeds, which may be prepared with highly controlled orientation (i.e. with a well-defined a-b plane and precisely known a-direction), is based on their superheating properties and reduces significantly contamination of the bulk sample by the seed material. A variety of grain boundaries were obtained by varying the angle between the seeds. Microstructural studies indicate that the extent of residual melt deposited at the grain boundary decreases with increasing grain boundary contact angle. It is established that the growth front proceeds continuously at the (110)/(110) grain boundary without trapping liquid, which leads to the formation of a clean grain boundary.