Source author record

C. Ratsch

C. Ratsch appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci

Catalog footprint

What is connected

2works

1topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2011arXiv

Ab-Initio calculations of binding energy of In and Ga adatoms on three GaAs(111)A surface reconstructions

Calculations of the potential energy surface for tracer Ga and In adatoms above three GaAs (111)A surface reconstructions are presented in order to understand the growth conditions required to form axial heterostructures in GaAs/InGaAs nano-pillars. In all calculations the Ga adatom has a stronger bond energy to the surface than the In adatom. The diffusion barriers for Ga adatoms are 140meV larger than for In adatoms on the Ga vacancy surface, but they are comparable on the As trimer surface. Also the binding energy for an In adatom is closer to that of a Ga adatom on the As trimer surface. We conclude that the As trimer surface is preferable for adsorption of In and thus for selective formation of hetero-interfaces on (111) facets. This work helps explain the recent successful formation of axial GaAs/InGaAs hetero-interfaces in catalyst free nano-pillars.

preprint1997arXiv

Study of Strain and Temperature Dependence of Metal Epitaxy

Metallic films are important in catalysis, magneto-optic storage media, and interconnects in microelectronics, and it is crucial to predict and control their morphologies. The evolution of a growing crystal is determined by the behavior of each individual atom, but technologically relevant structures have to be described on a time scale of the order of (at least) tenths of a second and on a length scale of nanometers. An adequate theory of growth should describe the atomistic level on very short time scales (femtoseconds), the formation of small islands (microseconds), as well as the evolution of mesoscopic and macroscopic structures (tenths of seconds). The development of efficient algorithms combined with the availability of cheaper and faster computers has turned density functional theory (DFT) into a reliable and feasible tool to study the microscopic aspects of growth phenomena (and many other complex processes in materials science, condensed matter physics, and chemistry). In this paper some DFT results for diffusion properties on metallic surfaces are presented. Particularly, we will discuss the current understanding of the influences of strain on the diffusion (energy barrier and prefactor) of a single adatom on a substrate. A DFT total energy calculation by its nature is primarily a static calculation. An accurate way to describe the spatial and temporal development of a growing crystal is given by kinetic Monte Carlo (KMC). We will describe the method and its combination with microscopic parameters obtained from ab initio calculations. It is shown that realistic ab initio kinetic Monte Carlo simulations are able to predict an evolving mesoscopic structure on the basis of microscopic details.