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Researcher profile

C. R. Eddy Jr.

C. R. Eddy Jr. contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2020arXiv

High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si/AlN interface. For a 9x DBR, the measured peak reflectance of 96.8% actually exceeded the theoretical value of 96.1%. The AlN/AlGaN superlattice served the added purpose of compensating the large tensile strain developed during the growth of a crack-free 500 nm GaN / 7x DBR / Si structure. This achievement opens the possibility to manufacture high-quality III-nitride optoelectronic devices without optical absorption in the opaque Si substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates

High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. The DBR structure was under significant strain due to growth on a mismatched substrate although the GaN cap layer was shown to be strain free.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Atomic-Scale Movement Induced in Nano-Ridges by Scanning Tunneling Microscopy on Epitaxial Graphene Grown on 4H-SiC(0001)

Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller than previously reported ridges. Atomic-resolution STM was performed near and on top of the nano-ridges using a dual scanning technique in which forward and reverse images are simultaneously recorded. An apparent 100% enlarged graphene lattice constant is observed along the leading edge of the image for both directions. Horizontal movement of the graphene, due to both an electrostatic attraction to the STM tip and weak bonding to the substrate, is thought to contribute to the results.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4° between the top two layers, by comparing moiré patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furthermore, the experimental moiré pattern shows dynamic behavior, continuously shuffling between two stable surface arrangements one bond length apart. The moiré pattern shifts by more than 1 nm, making it easy to observe with STM. Explanation of this dynamic behavior is attributed to electrostatic interactions between the STM tip and the graphene sample.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy

Twisted graphene layers produce a moiré pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any angle other than pure AB-stacked or AA-stacked graphene is impossible using first-principles density functional theory (DFT) due to the large supercell. Here, within elasticity theory we define the MP structure as the minimum energy configuration, thereby leaving the height amplitude as the only unknown parameter. The latter is determined from DFT calculations for AB and AA stacked bilayer graphene in order to eliminate all fitting parameters. Excellent agreement with scanning tunneling microscopy (STM) results across multiple substrates is reported as function of twist angle.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moiré pattern wavelength, L as L^-1 + αL^-2.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field-dependent measurements we identify that transitions in decoupled graphene mono-layers are governed by polarization mixing selection rules, whereas transitions in coupled graphene mono-layers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau level transitions with free charge carrier magneto-optic plasma oscillations.

0 citations0 reviewsNo code linkedOpen access