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C. R. Ast

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other cond-mat.supr-con

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preprint2022arXiv

Tunneling processes between Yu-Shiba-Rusinov bound states

Very recent experiments have reported the tunneling between Yu-Shiba-Rusinov (YSR) bound states at the atomic scale. These experiments have been realized with the help of a scanning tunneling microscope where a superconducting tip is functionalized with a magnetic impurity and is used to probe another magnetic impurity deposited on a superconducting substrate. In this way it has become possible to study for the first time the spin-dependent transport between individual superconducting bound states. Motivated by these experiments, we present here a comprehensive theoretical study of the tunneling processes between YSR bound states in a system in which two magnetic impurities are coupled to superconducting leads. Our theory is based on a combination of an Anderson model with broken spin degeneracy to describe the impurities and nonequilibrium Green's function techniques to compute the current-voltage characteristics. This combination allows us to describe the spin-dependent transport for an arbitrary strength of the tunnel coupling between the impurities. We first focus on the tunnel regime and show that our theory naturally explains the experimental observations of the appearance of current peaks in the subgap region due to both the direct and thermal tunneling between the YSR states in both impurities. Then, we study in detail the case of junctions with increasing transparency, which has not been experimentally explored yet, and predict the occurrence of a large variety of (multiple) Andreev reflections mediated by YSR states that give rise to a very rich structure in the subgap current. In particular, we predict the occurrence of multiple Andreev reflections that involve YSR states in different impurities. These processes have no analogue in single-impurity junctions and they are manifested as current peaks with negative differential conductance for subgap voltages.

preprint2020arXiv

Dirac Fermions and Possible Weak Antilocalization in LaCuSb$_{2}$

Layered heavy-metal square-lattice compounds have recently emerged as potential Dirac fermion materials due to bonding within those sublattices. We report quantum transport and spectroscopic data on the layered Sb square-lattice material LaCuSb$_{2}$. Linearly dispersing band crossings, necessary to generate Dirac fermions, are experimentally observed in the electronic band structure observed using angle-resolved photoemission spectroscopy (ARPES), along with a quasi-two-dimensional Fermi surface. Weak antilocalization that arises from two-dimensional transport is observed in the magnetoresistance, as well as regions of linear dependence, both of which are indicative of topologically non-trivial effects. Measurements of the Shubnikov-de Haas (SdH) quantum oscillations show low effective mass electrons on the order of 0.065$m_{e}$, further confirming the presence of Dirac fermions in this material.

preprint2016arXiv

Observation of Dirac surface states in the noncentrosymmetric superconductor BiPd

Materials with strong spin-orbit coupling (SOC) have in recent years become a subject of intense research due to their potential applications in spintronics and quantum information technology. In particular, in systems which break inversion symmetry, SOC facilitates the Rashba-Dresselhaus effect, leading to a lifting of spin degeneracy in the bulk and intricate spin textures of the Bloch wave functions. Here, by combining angular resolved photoemission (ARPES) and low temperature scanning tunneling microscopy (STM) measurements with relativistic first-principles band structure calculations, we examine the role of SOC in single crystals of noncentrosymmetric BiPd. We report the detection of several Dirac surface states, one of which exhibits an extremely large spin splitting. Unlike the surface states in inversion-symmetric systems, the Dirac surface states of BiPd have completely different properties at opposite faces of the crystal and are not trivially linked by symmetry. The spin-splitting of the surface states exhibits a strong anisotropy by itself, which can be linked to the low in-plane symmetry of the surface termination.

preprint2014arXiv

Origin of Rashba-splitting in the quantized subbands at Bi2Se3 surface

We study the band structure of the $\text{Bi}_2\text{Se}_3$ topological insulator (111) surface using angle-resolved photoemission spectroscopy. We examine the situation where two sets of quantized subbands exhibiting different Rashba spin-splitting are created via bending of the conduction (CB) and the valence (VB) bands at the surface. While the CB subbands are strongly Rashba spin-split, the VB subbands do not exhibit clear spin-splitting. We find that CB and VB experience similar band bending magnitudes, which means, a spin-splitting discrepancy due to different surface potential gradients can be excluded. On the other hand, by comparing the experimental band structure to first principles LMTO band structure calculations, we find that the strongly spin-orbit coupled Bi 6$p$ orbitals dominate the orbital character of CB, whereas their admixture to VB is rather small. The spin-splitting discrepancy is, therefore, traced back to the difference in spin-orbit coupling between CB and VB in the respective subbands' regions.

preprint2012arXiv

Spin properties of 2D semiconductors probed by scanning tunneling microscopy

The interrelation between spin and charge in semiconductors leads to interesting effects, e.g., the Rashba-type spin-orbit splitting or the exchange enhancement. These properties are proposed to be used in applications such as spin transistors or spin qubits. Probing them on the local scale with the ultimate spatial resolution of the scanning tunneling microscope addresses their susceptibility to disorder directly. Here we review the results obtained on two-dimensional semiconductor systems (2DES). We describe the preparation and characterization of an adequate 2DES which can be probed by scanning tunneling microscopy. It is shown how the electron density and the disorder within the 2DES can be tuned and measured. The observed local density of states of weakly and strongly disordered systems is discussed in detail. It is shown that the weakly disordered 2DES exhibits quantum Hall effect in magnetic field. The corresponding local density of states across a quantum Hall transition is mapped showing the development from localized states to extended states and back to localized states in real space. Decoupling the 2DES from screening electrons of the bulk of the III-V semiconductor leads to a measurable exchange enhancement of up to 0.7 meV which depends on the local spin polarization of the 2DES. At stronger confinement potential, i.e. larger doping, the Rashba spin splitting with $α$ as large as $7\cdot 10^{-11}$eVm is observed as a beating in the density of states in magnetic field. The Rashba spin splitting varies with position by about $\pm 50$% being largest at potential hills.