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C. Nenstiel

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Published work

2 published item(s)

preprint2016arXiv

Electronic excitations stabilised by a degenerate electron gas in semiconductors

Excitons in semiconductors and insulators consist of fermionic subsystems, electrons and holes, whose attractive interaction facilitates bound quasiparticles with quasi-bosonic character due to even-numbered pair spins. In the presence of a degenerate electron gas, such excitons dissociate due to free carrier screening, leaving a spectrally broad and faint optical signature behind. Contrary to this expected behaviour, we have discovered pronounced emission traces in bulk, germanium-doped GaN up to 100 K, mimicking excitonic behaviour at high free electron concentrations from 3.4E19/cm3 to 8.9E19/cm3. Consequently, we show that a degenerate, three-dimensional electron gas stabilizes a novel class of quasiparticles, named collexons, by many-particle effects dominated by exchange of electrons with the Fermi gas. The observation of collexons and their stabilisation with rising doping concentration, is facilitated by a superior crystal quality due to perfect substitution of the host atom with the dopant.

preprint2015arXiv

Shallow carrier traps in hydrothermal ZnO crystals

Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy (Q-DLTS), photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap state at 23 meV, while H-doped ZnO produced by plasma doping shows two levels at 22 meV and 11 meV below the conduction band. As-grown ZnO displays the expected thermal decay of bound excitons with increasing temperature from 7 K, while we observed an anomalous behaviour of the excitonic emission in H-doped ZnO, in which its intensity increases with increasing temperature in the range 140-300 K. Based on a multitude of optical results, a qualitative model is developed which explains the Y line structural defects, which act as an electron trap with an activation energy of 11 meV, being responsible for the anomalous temperature-dependent cathodoluminescence of H-doped ZnO.