Transport of indirect excitons in ZnO quantum wells
We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.
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We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.
We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)-sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature whereas they are antiferromagnetic below 200 K approximately. Temperature dependence of the carrier mobility was determined using Raman line shape analysis of the longitudinal-optical-phonon-plasmon coupled modes. It shows that the microscopic mechanism for ferromagnetic ordering is coupling mediated by free electrons between spins of Co atoms. These results bring insight into a subtle interplay between charge carriers and magnetism in MBE-grown Zn(1-x)CoxO films.
This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchange, and the spin-orbit interactions. A quantitative description of the magnetoreflectivity findings indicates that the free excitons A and B are associated with the Gamma_7 and Gamma_9 valence bands, respectively, the order reversed as compared to wurtzite GaN. Furthermore, our results show that the magnitude of the giant exciton splittings, specific to dilute magnetic semiconductors, is unusual: the magnetoreflectivity data is described by an effective exchange energy N_0(beta-alpha)=+0.2+/-0.1 eV, what points to small and positive N_0 beta. It is shown that both the increase of the gap with x and the small positive value of the exchange energy N_0 beta corroborate recent theory describing the exchange splitting of the valence band in a non-perturbative way, suitable for the case of a strong p-d hybridization.
Using the methods of scanning electron (SEM) and atom force microscopy (AFM) as well as photoluminescence (PL) and Raman micro-spectroscopy, we investigated $Zn_{1-x}Co_xO$ films ($x=5$ and $15\%$) grown by molecular beam epitaxy on sapphire substrates. It is found that the films have a nanocrystalline structure with the grain size decreased from $\sim150$ down to $28$ nm at changing the $Co$ concentration from $5$ to $15\%$. High-resolution SEM images of $Zn_{0.85}Co_{0.15}O$ film have been interpreted as inhomogeneous lateral distribution of $Co$ atoms. Two broad emission bands observed in spectra of band-to-band PL are ascribed to emission from $Zn_{1-x}Co_xO$ nano-regions enriched and depleted with $Co$. In low-temperature PL spectra under sub-band excitation of $Zn_{1-x}Co_xO$ films, there observed are intra-center optical transitions due to $Co^{2+}$ center: $^2E(G)$, $^2A_1(G)$, $^2T_1(G)$, $^4T_1(P)$, $^2T_2(G)$ $\longrightarrow$ $^4A_2(F)$. Offered is a new approach to interpretation of resonant enhancement observed in multi-phonon scattering by $LO$ phonons in $Zn_{1-x}Co_xO$ under sub-bandgap excitation combined with the extrinsic Fröhlich interaction mediated via a localized exciton bound to the isoelectronic impurity in which the electron is strongly localized at the magnetic $Co^{2+}$ ion. This conclusion is confirmed by the dependence of Raman spectra on the quantum energy of exciting radiation. It assumes formation of intermediated sub-band electron excited states of isoelectron $Co$ dopant, they are also referred to as charge transfer processes.