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C. J. Mellor

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con quant-ph

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preprint2014arXiv

Increased surface flashover voltage in microfabricated devices

With the demand for improved performance in microfabricated devices, the necessity to apply greater electric fields and voltages becomes evident. When operating in vacuum, the voltage is typically limited by surface flashover forming along the surface of a dielectric. By modifying the fabrication process we have discovered it is possible to more than double the flashover voltage. Our finding has significant impact on the realization of next-generation micro- and nano-fabricated devices and for the fabrication of on-chip ion trap arrays for the realization of scalable ion quantum technology.

preprint2012arXiv

Nonlinear modal coupling in a high-stress doubly-clamped nanomechanical resonator

We present results from a study of the nonlinear intermodal coupling between different flexural vibrational modes of a single high-stress, doubly-clamped silicon nitride nanomechanical beam. The measurements were carried out at 100 mK and the beam was actuated using the magnetomotive technique. We observed the nonlinear behavior of the modes individually and also measured the coupling between them by driving the beam at multiple frequencies. We demonstrate that the different modes of the resonator are coupled to each other by the displacement induced tension in the beam, which also leads to the well known Duffing nonlinearity in doubly-clamped beams.

preprint2012arXiv

Real-space imaging of quantum Hall effect edge strips

We use dynamic scanning capacitance microscopy (DSCM) to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex local conductance, Gts, between a sharp metallic tip scanned across the sample surface and ground, comprising the complex sample conductance. Near integer filling factors we observe a bright stripe along the sample edge in the imaginary part of Gts. The simultaneously recorded real part exhibits a sharp peak at the boundary between the sample interior and the stripe observed in the imaginary part. The features are periodic in the inverse magnetic field and consistent with compressible and incompressible strips forming at the sample edge. For currents larger than the critical current of the QHE break-down the stripes vanish sharply and a homogeneous signal is recovered, similar to zero magnetic field. Our experiments directly illustrate the formation and a variety of properties of the conceptually important QHE edge states at the physical edge of a 2DEG.

preprint2011arXiv

Spin polarization of (Ga,Mn)As measured by Andreev Spectroscopy: The role of spin-active scattering

We investigate the spin-polarization of the ferromagnetic semiconductor (Ga,Mn)As by point contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a recent theoretical model that accounts for momentum- and spin-dependent scattering at the interface. This allows us to fit the data without resorting, as in the case of the standard spin-dependent Blonder-Tinkham-Klapwijk (BTK) model, to an effective temperature or a statistical distribution of superconducting gaps. We find a transport polarization PC{\approx}57%, in considerably better agreement with the k{\cdot}p kinetic-exchange model of (Ga,Mn)As, than the significantly larger estimates inferred from the BTK model. The temperature dependence of the conductance spectra is fully analyzed.

preprint2009arXiv

Dissipation due to tunneling two-level systems in gold nanomechanical resonators

We present measurements of the dissipation and frequency shift in nanomechanical gold resonators at temperatures down to 10 mK. The resonators were fabricated as doubly-clamped beams above a GaAs substrate and actuated magnetomotively. Measurements on beams with frequencies 7.95 MHz and 3.87 MHz revealed that from 30 mK to 500 mK the dissipation increases with temperature as $T^{0.5}$, with saturation occurring at higher temperatures. The relative frequency shift of the resonators increases logarithmically with temperature up to at least 400 mK. Similarities with the behavior of bulk amorphous solids suggest that the dissipation in our resonators is dominated by two-level systems.