Researcher profile

C. Gómez-Navarro

C. Gómez-Navarro contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Improved graphene blisters by ultrahigh pressure sealing

Graphene is a very attractive material for nanomechanical devices and membrane applications. Graphene blisters based on silicon oxide micro-cavities are a simple but relevant example of nanoactuators. A drawback of this experimental set up is that gas leakage through the graphene-SiO2 interface contributes significantly to the total leak rate. Here we study the diffusion of air from pressurized graphene drumheads on SiO2 micro-cavities and propose a straightforward method to improve the already strong adhesion between graphene and the underlying SiO2 substrate, resulting in reduced leak rates. This is carried out by applying controlled and localized ultrahigh pressure (> 10 GPa) with an Atomic Force Microscopy diamond tip. With this procedure, we are able to significantly approach the graphene layer to the SiO2 surface around the drumheads, thus enhancing the interaction between them allowing us to better seal the graphene-SiO2 interface, which is reflected in up to ~ 4 times lower leakage rates. Our work opens an easy way to improve the performance of graphene as a gas membrane on a technological relevant substrate such as SiO2.

preprint2013arXiv

Conductance of partially disordered graphene: Crossover from temperature-dependent to field-dependent variable-range hopping

We report and analyze low-temperature measurements of the conductance of partially disordered reduced graphene oxide, finding that the data follow a simple crossover scenario. At room temperature, conductance is dominated by two-dimensional (2D) electric field-assisted, thermally-driven (Pollak-Riess) variable-range hopping (VRH) through highly-disordered regions. However, at lower temperatures T, we find a smooth crossover to follow the exp(-E_0/E)^(1/3) field-driven (Shklovskii) 2D VRH conductance behaviour when the electric field E exceeds a specific crossover value E_C (T)_2D = (E_a E_0^(1/3) /3)^(3/4) determined by the scale factors E_0 and E_a for the high-field and intermediate field regimes respectively. Our crossover scenario also accounts well for experimental data reported by other authors for three-dimensional disordered carbon networks, suggesting wide applicability.