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C. F. Ramirez-Gutierrez

C. F. Ramirez-Gutierrez appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2020arXiv

Optical intersubband properties of a core-shell semiconductor-topological insulator quantum dot described by $θ$-Electrodynamics

The optical properties of a spherical topological insulator embedded concentrically in a single-electron system consisting of a core-shell GaAs quantum dot are analyzed, when the system is under a uniform external magnetic field. The topological insulator's magnetoelectric response is computed in the effective framework of $θ$-electrodynamics, which allows analytical calculations for the induced electric and magnetic potentials by Green's Function method. The GaAs Hamiltonian is constructed in the effective-mass approximation, and its corresponding Schrödinger equation is numerically solved through the Lagrange-mesh method. We compute the total absorption coefficients and refractive index changes given by the non-linear iterative density matrix formalism up to third order. Our results show that the presence of the magnetoelectric material causes new dipolar transitions otherwise not allowed. Also, an enhancement of the photon absorption is found when the incident light polarization is oriented parallel to the external magnetic field, in comparison with perpendicular polarization. Moreover, we report an appreciable blue shift in the optical functions when the values of the $θ$-parameter are increased. These results can be useful for indirect experimental measures of the magnetoelectric polarizability which is proportional to the QED fine-structure constant $α$.

preprint2016arXiv

In situ photoacoustic characterization for porous silicon growing: detection principles

There are a few methodologies to monitoring the Porous Silicon (PS) formation in-situ. One of these methodologies is photoacoustic. Previous works that reported the use of photoacoustic to study the PS formation do not provide the physical explanation of the origin of the signal. In this paper, a physical explanation is provided of the origin of the photoacoustic signal during the PS etching. The incident modulated radiation and changes in the reflectance are taken as thermal sources. In this paper, a useful methodology is proposed to determine the etching rate, porosity, and refractive index of a PS film by the determination of the sample thickness, using SEM images. This method was developed by carrying out two different experiments using the same anodization conditions. The first experiment consisted of the growth of samples with different etching times to prove the periodicity of the photoacoustic signal and the second considered the growth samples using three different wavelengths that are correlated with the period of the photoacoustic signal. The last experiment showed that the period of the photoacoustic signal is proportional to the laser wavelength.