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C. Ciccarelli

C. Ciccarelli appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

11 published item(s)

preprint2025arXiv

Materials for Quantum Technologies: a Roadmap for Spin and Topology

In this Perspective article, we explore some of the promising spin and topology material platforms (e.g. spins in semi- and superconductors, skyrmionic, topological and 2D materials) being developed for such quantum components as qubits, superconducting memories, sensing, and metrological standards and discuss their figures of merit. Spin- and topology-related quantum phenomena have several advantages, including high coherence time, topological protection and stability, low error rate, relative ease of engineering and control, simple initiation and read-out. However, the relevant technologies are at different stages of research and development, and here we discuss their state-of-the-art, potential applications, challenges and solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Symmetry effects on the static and dynamic properties of coupled magnetic oscillators

The effect of symmetry on the resonance spectra of antiferromagnetically coupled oscillators has attracted new interest with the discovery of symmetry-breaking induced anti-crossings. Here, we experimentally characterise the resonance spectrum of a synthetic antiferromagnet Pt/CoFeB/Ru/CoFeB/Pt, where we are able to independently tune the effective magnetisation of the two coupled magnets. To model our results we apply the mathematical methods of group theory to the solutions of the Landau Lifshitz Gilbert equation. This general approach, usually applied to quantum mechanical systems, allows us to identify the main features of the resonance spectrum in terms of symmetry breaking and to make a direct comparison with crystal antiferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Growth, strain and spin orbit torques in epitaxial NiMnSb films sputtered on GaAs

We report current-induced spin torques in epitaxial NiMnSb films on a commercially available epi-ready GaAs substrate. The NiMnSb was grown by co-sputtering from three targets using optimised parameter. The films were processed into micro-scale bars to perform current-induced spin-torque measurements. Magnetic dynamics were excited by microwave currents and electric voltages along the bars were measured to analyse the symmetry of the current-induced torques. We found that the extracted symmetry of the spin torques matches those expected from spin-orbit interaction in a tetragonally distorted half-Heusler crystal. Both field-like and damping-like torques are observed in all the samples characterised, and the efficiency of the current-induced torques is comparable to that of ferromagnetic metal/heavy metal bilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electrical manipulation of a ferromagnet by an antiferromagnet

We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac-current in a NiFe/IrMn bilayer. At room temperature, we observe antidamping-like spin torque acting on the NiFe ferromagnet, generated by the in-plane current driven through the IrMn antiferromagnet. A large enhancement of the torque, characterized by an effective spin-Hall angle exceeding most heavy transition metals, correlates with the presence of the exchange-bias field at the NiFe/IrMn interface. It highlights that, in addition to strong spin-orbit coupling, the antiferromagnetic order in IrMn governs the observed phenomenon.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Radio-frequency capacitance spectroscopy of metallic nanoparticles

Recent years have seen great progress in our understanding of the electronic properties of nanomaterials in which at least one dimension measures less than 100 nm. However, contacting true nanometer scale materials such as individual molecules or nanoparticles remains a challenge as even state-of-the-art nanofabrication techniques such as electron-beam lithography have a resolution of a few nm at best. Here we present a fabrication and measurement technique that allows high sensitivity and high bandwidth readout of discrete quantum states of metallic nanoparticles which does not require nm resolution or precision. This is achieved by coupling the nanoparticles to resonant electrical circuits and measurement of the phase of a reflected radio-frequency signal. This requires only a single tunnel contact to the nanoparticles thus simplifying device fabrication and improving yield and reliability. The technique is demonstrated by measurements on 2.7 nm thiol coated gold nanoparticles which are shown to be in excellent quantitative agreement with theory.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors

We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Room-temperature spin-orbit torque in NiMnSb

Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electrical switching in an antiferromagnetic memory at room temperature. When the inversion-partner sites are occupied by different atoms, a non-zero global spin-polarization is generated by the applied current which can switch a ferromagnet, as reported at low temperatures in the diluted magnetic semiconductor (Ga,Mn)As. Here we demonstrate the effect of the global current-induced spin polarization in a counterpart crystal-symmetry material NiMnSb which is a member of the broad family of magnetic Heusler compounds. It is an ordered high-temperature ferromagnetic metal whose other favorable characteristics include high spin-polarization and low damping of magnetization dynamics. Our experiments are performed on strained single-crystal epilayers of NiMnSb grown on InGaAs. By performing all-electrical ferromagnetic resonance measurements in microbars patterned along different crystal axes we detect room-temperature spin-orbit torques generated by effective fields of the Dresselhaus symmetry. The measured magnitude and symmetry of the current-induced torques are consistent with our relativistic density-functional theory calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin gating electrical current

We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-monotonic behavior. The observed effects are explained by calculations based on the $\mathbf{k}\cdot\mathbf{p}$ kinetic exchange model of ferromagnetism in GaMnAs. Our device inverts the conventional approach for constructing spin transistors: instead of spin-transport controlled by ordinary gates we spin-gate ordinary charge transport.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Impedance of the single electron transistor at radio-frequencies

We experimentally characterise the impedance of a single electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of the device. At zero source-drain bias the single electron transistor displays both resistive (Sisyphus resistance) and reactive (tunnelling capacitance) components to its impedance. We study the bias dependence of the complex impedance, investigating its response as the electron tunnel rate becomes large with respect to the driving frequency. The experimental data are compared to values calculated from a master equation model.

0 citations0 reviewsNo code linkedOpen access