Researcher profile

C. Blanc

C. Blanc contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Evidence for the role of normal-state electrons in nanoelectromechanical damping mechanisms at very low temperatures

We report on experiments performed at low temperatures on aluminum covered silicon nanoelectromechanical resonators. The substantial difference observed between the mechanical dissipation in the normal and superconducting states measured within the same device unambiguously demonstrates the importance of normal-state electrons in the damping mechanism. The dissipative component becomes vanishingly small at very low temperatures in the superconducting state, leading to exceptional values for the quality factor of such small silicon structures. A critical discussion is given within the framework of the standard tunneling model.

preprint2015arXiv

Modal "self-coupling" as a sensitive probe for nanomechanical detection

We present a high-sensitivity measurement technique for mechanical nanoresonators. Due to intrinsic nonlinear effects, different flexural modes of a nanobeam can be coupled while driving each of them on resonance. This mode-coupling scheme is dispersive and one mode resonance shifts with respect to the motional amplitude of the other. The same idea can be implemented on a {\it single} mode, exciting it with two slightly detuned signals. This two-tone scheme is used here to measure the resonance lineshape of one mode through a frequency shift in the response of the device. The method acts as an amplitude-to-frequency transduction which ultimately suffers only from phase noise of the local oscillator used and of the nanomechanical device itself. We also present a theory which reproduces the data without free parameters.

preprint2015arXiv

Normal metal tunnel junction-based superconducting quantum interference proximity transistor: the N-SQUIPT

We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the proximized metal nanowire and the N probe allows us to observe the full modulation of the wire density of states around zero voltage and current \textit{via} the application of an external magnetic field. This results into a drastic suppression of power dissipation which can be as low as a few $\sim 10^{-17}$ W. In this context the interferometer allows an improvement of up to four orders of magnitude with respect to earlier SQUIPT designs, and makes it ideal for extra-low power cryogenic applications. In addition, the N-SQUIPT has been recently predicted to be the enabling candidate for the implementation of coherent caloritronic devices based on proximity effect.