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C. Bacaksiz

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Published work

5 published item(s)

preprint2020arXiv

Hematite at its thinnest limit

Motivated by the recent synthesis of two-dimensional $α$-Fe$_2$O$_3$ [Balan $et$ $al.$ Nat. Nanotech. 13, 602 (2018)], we analyze the structural, vibrational, electronic and magnetic properties of single- and few-layer $α$-Fe$_2$O$_3$ compared to bulk, by $ab-initio$ and Monte-Carlo simulations. We reveal how monolayer $α$-Fe$_2$O$_3$ (hematene) can be distinguished from the few-layer structures, and how they all differ from bulk through observable Raman spectra. The optical spectra exhibit gradual shift of the prominent peak to higher energy, as well as additional features at lower energy when $α$-Fe$_2$O$_3$ is thinned down to a monolayer. Both optical and electronic properties have strong spin asymmetry, meaning that lower-energy optical and electronic activities are allowed for the single-spin state. Finally, our considerations of magnetic properties reveal that 2D hematite has anti-ferromagnetic ground state for all thicknesses, but the critical temperature for Morin transition increases with decreasing sample thickness. On all accounts, the link to available experimental data is made, and further measurements are prompted.

preprint2016arXiv

Bilayer SnS$_{2}$: Easy-tunable Stacking Sequence by Charging and Loading Pressure

Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS$_{2}$, which is recently synthesized monolayer metal dichalcogenide. Comparison of 1H and 1T phases of monolayer SnS$_{2}$ confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the interlayer coupling in bilayer SnS$_{2}$ is weaker than that of typical transition-metal dichalcogenides (TMDs) so that alternative stacking orders have similar structural parameters and they are separated with low energy barriers. Possible signature of the stacking order in SnS$_{2}$ bilayer has been sought in the calculated absorbance and reflectivity spectra. We also study the effects of the external electric field, charging, and loading pressure on the characteristic properties of bilayer SnS$_{2}$. It is found that (i) the electric field increases the coupling between the layers at its prefered stacking order, so the barrier height increases, (ii) the bang gap value can be tuned by the external E-field and under sufficient E-field, the bilayer SnS$_{2}$ can become semi-metal, (iii) the most favorable stacking order can be switched by charging and (iv) a loading pressure exceeding 3 GPa changes the stacking order. E-field tunable bandgap and easy-tunable stacking sequence of SnS$_{2}$ layers make this 2D crystal structure a good candidate for field effect transistor and nanoscale lubricant applications.

preprint2016arXiv

Computing Optical Properties of Ultra-thin Crystals

An overview is given of recent advances in experimental and theoretical understanding of optical properties of ultra-thin crystal structures (graphene, phosphorene, silicene, MoS2, MoSe2 , WS2 , WSe2 , h-AlN, h-BN, fluorographene, graphane). Ultra-thin crystals are atomically-thick layered crystals that have unique properties which differ from their 3D counterpart. Because of the difficulties in the synthesis of few-atom-thick crystal structures, which are thought to be the main building blocks of future nanotechnology, reliable theoretical predictions of their electronic, vibrational and optical properties are of great importance. Recent studies revealed the reliable predictive power of existing theoretical approaches based on density functional theory (DFT).

preprint2016arXiv

Single Layer PbI2 : Hydrogenation-driven Reconstructions

By performing density functional theory-based calculations, we investigate how hydrogen atom interacts with the surfaces of monolayer PbI2 and how one and two side hydrogenation modify its structural, electronic, and magnetic properties. Firstly, it was shown that T-phase of single layer PbI2 is energetically favorable than the H-phase. It is found that hydrogenation of its surfaces is possible through the adsorption of each hydrogen on iodine sites. While H atoms do not form a particular bonding-type at low concentration, by increasing the number of hydrogenated I-sites well-ordered hydrogen patterns are formed on PbI2 matrix. In addition, we found that for one-side hydrogenation, the structure forms a (2x1) Jahn-Teller type distorted structure and band gap is dramatically reduced compared to hydrogen-free single layer PbI2 . Moreover, in the case of full-hydrogenation, the structure also possesses another (2x2) reconstruction with reduction in the band gap. Easy-tunable electronic and structural properties of single layer PbI2 by hydrogenation reveal its potential use in nanoscale semiconducting device applications.

preprint2015arXiv

Hexagonal AlN: Dimensional-Crossover-Driven Bandgap Transition

Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al. Appl. Phys. Lett. 103, 251605 (2013)] we investigate structural, electronic and vibrational properties of bulk, bilayer and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-bandgap semiconductor. Calculated phonon spectrum displays a rigid-layer shear mode at 274 cm-1 and an Eg mode at 703 cm-1 which are observable by Raman measurements. In addition, single layer h-AlN is an indirect-bandgap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA' type stacking is found to be the most favorable one and interlayer interaction is strong. While N-layered h-AlN is an indirect bandgap semiconductor for N=1-10, we predict that thicker structures (N>10) have a direct-bandgap at the Gamma-point. The number-of-layer-dependent bandgap transitions in h-AlN is interesting in that it is significantly different from the indirect-to- direct crossover obtained in the transition metal dichalcogenides.