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C. Ataca

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Published work

6 published item(s)

preprint2014arXiv

Frictional figures of merit for single layered nanostructures

We determined frictional figures of merit for a pair of layered honeycomb nanostructures, such as graphane, fluorographene, MoS$_2$ and WO$_2$ moving over each other, by carrying out ab-initio calculations of interlayer interaction under constant loading force. Using Prandtl-Tomlinson model we derived critical stiffness required to avoid stick-slip behavior. We showed that these layered structures have low critical stiffness even under high loading forces due to their charged surfaces repelling each other. The intrinsic stiffness of these materials exceed critical stiffness and thereby avoid the stick-slip regime and attain nearly dissipationless continuous sliding. Remarkably, tungsten dioxide displays much better performance relative to others and heralds a potential superlubricant. The absence of mechanical instabilities leading to conservative lateral forces is also confirmed directly by the simulations of sliding layers.

preprint2013arXiv

Supercapacitors composed of graphene and boron nitride layers: A first-principles study

We propose a model for nanoscale supercapacitor consisting of two-dimensional insulating BN layers placed between two commensurate and metallic graphene layers. First-principles Density Functional calculations of structure optimized total energy and self-consistent field potential performed on these nanoscale capacitors for different levels of charging and different number of BN layers mark the values of capacitance per unit mass, which are larger than those measured values for the supercapacitors made from other carbon based materials. Our theoretical study also compares results obtained for the present nanoscale capacitor with those of classical Helmholtz model and reveals crucial differences. Our model allows the fabrication of series/parallel mixed combinations consisting of epitaxially grown, sequential and multiple graphene/BN sheets.

preprint2011arXiv

Carbon chains grown perpendicularly on graphene

Based on first-principles calculations we predict a peculiar growth process, where carbon adatoms adsorbed to graphene readily diffuse above room temperature and nucleate segments of linear carbon chains attached to graphene. These chains grow longer on graphene through insertion of carbon atoms one at a time from the bottom end and display a self-assembling behavior. Eventually, two allotropes of carbon, namely graphene and cumulene are combined to exhibit important functionalities. The segments of carbon chains on graphene become chemically active sites to bind foreign atoms or large molecules. When bound to the ends of carbon chains, transition metal atoms, Ti, Co and Au, attribute a magnetic ground state to graphene sheets and mediate stable contacts with interconnects. We showed that carbon chains can grow also on single wall carbon nanotubes.

preprint2011arXiv

Functionalization of Single Layer MoS$_2$ Honeycomb Structures

Based on the first-principles plane wave calculations, we studied the functionalization of the two-dimensional single layer MoS$_2$ structure via adatom adsorption and vacancy defect creation. Minimum energy adsorption sites are determined for sixteen different adatoms, each gives rise to diverse properties. Bare, single layer MoS$_2$, which is normally a nonmagnetic, direct band gap semiconductor, attains a net magnetic moment upon adsorption of specific transition metal atoms, as well as silicon and germanium atoms. The localized donor and acceptor states in the band gap expand the utilization of MoS$_2$ in nanoelectronics and spintronics. Specific adatoms, like C and O, attain significant excess charge upon adsorption to single layer MoS$_{2}$ which may be useful for its tribological applications. Each MoS$_{2}$-triple vacancy created in a single layer MoS$_{2}$ gives rise to a net magnetic moment, while other vacancy defects related with Mo and S atoms do not influence the nonmagnetic ground state. Present results are also relevant for the surface of graphitic MoS$_2$.

preprint2011arXiv

Mechanical and Electronic Properties of MoS$_2$ Nanoribbons and Their Defects

We present our study on atomic, electronic, magnetic and phonon properties of one dimensional honeycomb structure of molybdenum disulfide (MoS$_2$) using first-principles plane wave method. Calculated phonon frequencies of bare armchair nanoribbon reveal the fourth acoustic branch and indicate the stability. Force constant and in-plane stiffness calculated in the harmonic elastic deformation range signify that the MoS$_2$ nanoribbons are stiff quasi one dimensional structures, but not as strong as graphene and BN nanoribbons. Bare MoS$_2$ armchair nanoribbons are nonmagnetic, direct band gap semiconductors. Bare zigzag MoS$_2$ nanoribbons become half-metallic as a result of the (2x1) reconstruction of edge atoms and are semiconductor for minority spins, but metallic for the majority spins. Their magnetic moments and spin-polarizations at the Fermi level are reduced as a result of the passivation of edge atoms by hydrogen. The functionalization of MoS$_2$ nanoribbons by adatom adsorption and vacancy defect creation are also studied. The nonmagnetic armchair nanoribbons attain net magnetic moment depending on where the foreign atoms are adsorbed and what kind of vacancy defect is created. The magnetization of zigzag nanoribbons due to the edge states is suppressed in the presence of vacancy defects.

preprint2010arXiv

Functionalization of BN Honeycomb structure by Adsorption and Substitution of Foreign atoms

We carried out first-principles calculations within Density Functional Theory to investigate the structural, electronic and magnetic properties of boron-nitride (BN) honeycomb structure functionalized by adatom adsorption, as well as by the substitution of foreign atoms for B and N atoms. For periodic high density coverage, most of $3d$ transition metal atoms and some of group 3A, 4A, and 6A elements are adsorbed with significant binding energy and modify the electronic structure of bare BN monolayer. While bare BN monolayer is nonmagnetic, wide band gap semiconductor, at high coverage of specific adatoms it can achieve magnetic metallic, even half-metallic ground states. At low coverage, the bands associated with adsorbed atoms are flat and the band structure of parent BN is not affected significantly. Therefore, adatoms and substitution of foreign atoms at low coverage are taken to be the representative of impurity atoms yielding localized states in the band gap and resonance states in the band continua. Notably, the substitution of C for B and N yield donor and acceptor like magnetic states in the band gap. Localized impurity states occurring in the gap give rise to interesting properties for electronic and optical application of the single layer BN honeycomb structure.