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C. A. Ullrich

C. A. Ullrich contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2012arXiv

Comment on "Density and Physical Current Density Functional Theory" by Xiao-Yin Pan and Viraht Sahni, Int. J. Quant. Chem. 110, 2833 (2010)

This comment criticizes the above paper by Xiao-Yin Pan and Viraht Sahni. It is shown that their formulation of "Physical Current Density Functional Theory" is, at best, a garbled reformulation of the Vignale-Rasolt current-density functional theory, and, at worst, a potential source of mistakes insofar as it complicates the formulation of the variational principle and prevents the constrained search construction of the universal functional.

preprint2011arXiv

Response properties of III-V dilute magnetic semiconductors: interplay of disorder, dynamical electron-electron interactions and band-structure effects

A theory of the electronic response in spin and charge disordered media is developed with the particular aim to describe III-V dilute magnetic semiconductors like GaMnAs. The theory combines a detailed k.p description of the valence band, in which the itinerant carriers are assumed to reside, with first-principles calculations of disorder contributions using an equation-of-motion approach for the current response function. A fully dynamic treatment of electron-electron interaction is achieved by means of time-dependent density functional theory. It is found that collective excitations within the valence band significantly increase the carrier relaxation rate by providing effective channels for momentum relaxation. This modification of the relaxation rate, however, only has a minor impact on the infrared optical conductivity in GaMnAs, which is mostly determined by the details of the valence band structure and found to be in agreement with experiment.

preprint2009arXiv

Spin gaps and spin-flip energies in density-functional theory

Energy gaps are crucial aspects of the electronic structure of finite and extended systems. Whereas much is known about how to define and calculate charge gaps in density-functional theory (DFT), and about the relation between these gaps and derivative discontinuities of the exchange-correlation functional, much less is know about spin gaps. In this paper we give density-functional definitions of spin-conserving gaps, spin-flip gaps and the spin stiffness in terms of many-body energies and in terms of single-particle (Kohn-Sham) energies. Our definitions are as analogous as possible to those commonly made in the charge case, but important differences between spin and charge gaps emerge already on the single-particle level because unlike the fundamental charge gap spin gaps involve excited-state energies. Kohn-Sham and many-body spin gaps are predicted to differ, and the difference is related to derivative discontinuities that are similar to, but distinct from, those usually considered in the case of charge gaps. Both ensemble DFT and time-dependent DFT (TDDFT) can be used to calculate these spin discontinuities from a suitable functional. We illustrate our findings by evaluating our definitions for the Lithium atom, for which we calculate spin gaps and spin discontinuities by making use of near-exact Kohn-Sham eigenvalues and, independently, from the single-pole approximation to TDDFT. The many-body corrections to the Kohn-Sham spin gaps are found to be negative, i.e., single particle calculations tend to overestimate spin gaps while they underestimate charge gaps.

preprint2009arXiv

Temperature-dependent resistivity of ferromagnetic GaMnAs: Interplay between impurity scattering and many-body effects

The static conductivity of the dilute magnetic semiconductor GaMnAs is calculated using the memory function formalism and time-dependent density-functional theory to account for impurity scattering and to treat Hartree and exchange interactions within the hole gas. We find that the Coulomb scattering off the charged impurities alone is not sufficient to explain the experimentally observed drop in resistivity below the ferromagnetic transition temperature: the often overlooked scattering off the fluctuations of localized spins is shown to play a significant role.

preprint2009arXiv

Time-dependent density-functional approach for exciton binding energies

Optical processes in insulators and semiconductors, including excitonic effects, can be described in principle exactly using time-dependent density-functional theory (TDDFT). Starting from a linearization of the TDDFT semiconductor Bloch equations in a two-band model, we derive a simple formalism for calculating excitonic binding energies. This formalism leads to a generalization of the standard Wannier equation for excitons, featuring a nonlocal effective electron-hole interaction determined by long-range and dynamical exchange-correlation (XC) effects. We calculate excitonic binding energies in several direct-gap semiconductors, using exchange-only and model XC kernels.

preprint2006arXiv

Time-dependent density-functional theory beyond the adiabatic approximation: insights from a two-electron model system

Most applications of time-dependent density-functional theory (TDDFT) use the adiabatic local-density approximation (ALDA) for the dynamical exchange-correlation potential Vxc(r,t). An exact (i.e., nonadiabatic) extension of the ground-state LDA into the dynamical regime leads to a Vxc(r,t) with a memory, which causes the electron dynamics to become dissipative. To illustrate and explain this nonadiabatic behavior, this paper studies the dynamics of two interacting electrons on a two-dimensional quantum strip of finite size, comparing TDDFT within and beyond the ALDA with numerical solutions of the two-electron time-dependent Schroedinger equation. It is shown explicitly how dissipation arises through multiple particle-hole excitations, and how the nonadiabatic extension of the ALDA fails for finite systems, but becomes correct in the thermodynamic limit.