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C. A. Marlow

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Published work

4 published item(s)

preprint2012arXiv

Is it the boundaries or disorder that dominates electron transport in semiconductor `billiards'?

Semiconductor billiards are often considered as ideal systems for studying dynamical chaos in the quantum mechanical limit. In the traditional picture, once the electron's mean free path, as determined by the mobility, becomes larger than the device, disorder is negligible and electron trajectories are shaped by specular reflection from the billiard walls alone. Experimental insight into the electron dynamics is normally obtained by magnetoconductance measurements. A number of recent experimental studies have shown these measurements to be largely independent of the billiards exact shape, and highly dependent on sample-to-sample variations in disorder. In this paper, we discuss these more recent findings within the full historical context of work on semiconductor billiards, and offer strong evidence that small-angle scattering at the sub-100 nm length-scale dominates transport in these devices, with important implications for the role these devices can play for experimental tests of ideas in quantum chaos.

preprint2012arXiv

Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices

The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors generate only minor perturbations to the electron trajectories, which are determined by scattering from billiard walls. We use magnetoconductance fluctuations as a probe of the quantum interference and show that these fluctuations change radically when the scattering landscape is modified by thermally-induced charge displacement between donor sites. Our results challenge the accepted understanding of quantum interference effects in nanostructures.

preprint2005arXiv

Nonlinear Effects on Quantum Interference in Electron Billiards

Magnetoconductance fluctuations are used to study the effect of an applied bias on an electron billiard. At lower bias, nonlinear effects can be well described by electron heating alone, while at higher bias (V > 2mV, ~5% of the electron Fermi energy) non-equilibrium effects become significant. At high bias, we also observe that the spectral content of the MCF is sensitive to the nonequilibrium effects. Spectral behavior is consistent with a fractal scaling of the conductance fluctuations with magnetic field, resulting in the first observation of fractal conductance fluctuations outside of the linear regime of transport.