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Source author record

Byong-Guk Park

Byong-Guk Park appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

7 published item(s)

preprint2026arXiv

Bio-resorbable magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) play a crucial role in spintronic applications, particularly data storage and sensors. Especially as a non-volatile memory, MTJs have received substantial attention due to its CMOS compatibility, low power consumption, fast switching speed, and high endurance. In parallel, bio-resorbable electronics have emerged as a promising solution for systems requiring temporary operation and secure data disposal, especially in military, intelligence, and biomedical systems where devices must safely disintegrate under physiological conditions. In this study, we investigate the bio-resorbability of MTJ by analyzing the dissolution behavior of its nanometer-thick constituent layers in phosphate-buffered saline (PBS) solution at pH 7.4, simulating physiological environments. The MTJ structures, composed of bio-resorbable materials, exhibit well-controlled degradation behaviors. Critically, as one of the ferromagnetic layers dissolves, binary information is irreversibly lost, within 10 hours of immersion. These findings highlight the potential of MTJs not only as high-performance memory elements but also as secure, transient data storage platforms. The ability to modify the dissolution lifetime by materials and thickness selection offers unique advantages for short-lived implantable devices, paving the way for integrating spintronic functionality into next-generation bioresorbable electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching

Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report two effective methods of the conversion through spin-orbit coupling engineering, which allows us to unambiguously demonstrate orbital-current-induced spin torque, or orbital Hall torque. We find that orbital Hall torque is greatly enhanced by introducing either a rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, indicating that the orbital current generated in Cr is efficiently converted into spin current in the Gd or Pt layer. Furthermore, we show that the orbital Hall torque can facilitate the reduction of switching current of perpendicular magnetization in spin-orbit-torque-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Long-Range Orbital Magnetoelectric Torque in Ferromagnets

While it is often assumed that the orbital response is suppressed and short-ranged due to strong crystal field potential and orbital quenching, we show that the orbital magnetoelectric response can be remarkably long-ranged in ferromagnets. In a bilayer consisting of a nonmagnet and a ferromagnet, spin injection from the interface results in spin accumulation and torque in the ferromagnet, which rapidly oscillate and decay by spin dephasing. In contrast, we find that even when an external electric field is applied only on the nonmagnet, we find substantially long-ranged orbital magnetoelectric response in the FM, which can go far beyond the spin dephasing length. This unusual feature is attributed to nearly degenerate orbital characters imposed by the crystal symmetry, which form hotspots for the intrinsic orbital response. Because only the states near the hotspots contribute dominantly, the induced orbital angular momentum does not exhibit destructive interference among states with different momentum as in the case of the spin dephasing. This gives rise to a distinct type of orbital torque on the magnetization, increasing with the thickness of the ferromagnet. Such behavior may serve as critical long-sought evidence of orbital transport to be directly tested in experiments. Our findings open the possibility of using long-range orbital magnetoelectric effect in orbitronic device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Antiferromagnetic domain wall motion driven by spin-orbit torques

We theoretically investigate dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet/heavy metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than ferromagnetic domain walls. As the domain wall velocity approaches the maximum spin-wave group velocity, the domain wall undergoes Lorentz contraction and emits spin-waves in the terahertz frequency range. The interplay between spin orbit torques and the relativistic dynamics of antiferromagnetic domain walls leads to the efficient manipulation of antiferromagnetic spin textures and paves the way for the generation of high frequency signals in antiferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures

The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed in manipulation of the magnetization direction by in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of the W/CoFeB/MgO structures and its correlation to the current-induced torque to the magnetization. We observe that the MR is independent of the angle between magnetization and current direction, but is determined by the relative magnetization orientation with respect to the spin direction accumulated by spin Hall effect, which is the same symmetry of so-called spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that they share the same underlying physics, which allows one to utilize the MR in non-magnet/ferromagnet structure in order to understand closely related other spin-orbit coupling effects such as inverse spin Hall effect, spin-orbit spin transfer torques, etc.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thermoelectric Signal Enhancement by Reconciling the Spin Seebeck and Anomalous Nernst Effects in Ferromagnet/Non-magnet Multilayers

The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be realized. The thermoelectricity in FM/non-magnet (NM) heterostructures using an optical heating source is studied as a function of NM materials and a number of multilayers. It is observed that the overall thermoelectric signal in those structures which is contributed by spin Seebeck effect and anomalous Nernst effect (ANE) is enhanced by a proper selection of NM materials with a spin Hall angle that matches to the sign of the ANE. Moreover, by an increase of the number of multilayer, the thermoelectric voltage is enlarged further and the device resistance is reduced, simultaneously. The experimental observation of the improvement of thermoelectric properties may pave the way for the realization of magnetic-(or spin-) based thermoelectric devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ferromagnetic resonance spin pumping in CoFeB with highly resistive non-magnetic electrodes

The relative contribution of spin pumping and spin rectification from the ferromagnetic resonance of CoFeB/non-magnetic bilayers was investigated as a function of non-magnetic electrode resistance. Samples with highly resistive electrodes of Ta or Ti exhibit a stronger spin rectification signal, which may result in over-(or under-)estimation of the spin Hall angle of the materials, while those with low resistive electrodes of Pt or Pd show the domination of the inverse spin Hall effect from spin pumping. By comparison with samples of single FM layer and an inverted structure, we provide a proper analysis method to extract spin pumping contribution.

0 citations0 reviewsNo code linkedOpen access