BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Bryan D. Huey

Bryan D. Huey appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-sci

Catalog footprint

What is connected

5works
1topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2022arXiv

The third dimension of ferroelectric domain walls

Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures. We demonstrate the importance of the nanoscale structure for the emergent transport properties, studying electronic conduction in the 3D network of neutral and charged domain walls in ErMnO$_3$. By combining tomographic microscopy techniques and finite element modelling, we clarify the contribution of domain walls within the bulk and show the significance of curvature effects for the local conduction down to the nanoscale. The findings provide insights into the propagation of electrical currents in domain wall networks, reveal additional degrees of freedom for their control, and provide quantitative guidelines for the design of domain wall based technology.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High Speed Friction Microscopy and Nanoscale Friction Coefficient Mapping

As mechanical devices in the nano/micro length scale are increasingly employed, it is crucial to understand nanoscale friction and wear especially at technically relevant sliding velocities. Accordingly, a novel technique has been developed for Friction Coefficient Mapping (FCM), leveraging recent advances in high speed AFM. The technique efficiently acquires friction versus force curves based on a sequence of images at a single location, each with incrementally lower loads. As a result, true maps of the coefficient of friction can be uniquely calculated for heterogeneous surfaces. These parameters are determined at a scan velocity as fast as 2 mm/s for microfabricated SiO2 mesas and Au coated pits, yielding results that are identical to traditional speed measurements despite being ~1000 times faster. To demonstrate the upper limit of sliding velocity for the custom setup, the friction properties of mica are reported from 200 μm/sec up to 2 cm/sec. While FCM is applicable to any AFM and scanning speed, quantitative nanotribology investigations of heterogeneous sliding or rolling components are therefore uniquely possible, even at realistic velocities for devices such as MEMS, biological implants, or data storage systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

In the search for phase change materials (PCM) that may rival traditional random access memory, a complete understanding of the amorphous to crystalline phase transition is required. For the well-known Ge2Sb2Te5 (GST) and GeTe (GT) chalcogenides, which display nucleation and growth dominated crystallization kinetics, respectively, this work explores the nanomechanical morphology of amorphous and crystalline phases in 50 nm thin films. Subjecting these PCM specimens to a lateral thermal gradient spanning the crystallization temperature allows for a detailed morphological investigation. Surface and depth-dependent analyses of the resulting amorphous, transition and crystalline regions are achieved with shallow angle cross-sections, uniquely implemented with beam exit Ar ion polishing. To resolve the distinct phases, ultrasonic force microscopy (UFM) with simultaneous topography is implemented revealing a relative stiffness contrast between the amorphous and crystalline phases of 14% for the free film surface and 20% for the cross-sectioned surface. Nucleation is observed to occur preferentially at the PCM-substrate and free film interface for both GST and GT, while fine subsurface structures are found to be sputtering direction dependent. Combining surface and cross-section nanomechanical mapping in this manner allows 3D analysis of microstructure and defects with nanoscale lateral and depth resolution, applicable to a wide range of materials characterization studies where the detection of subtle variations in elastic modulus or stiffness are required.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Control of Length and Spatial Functionality of Single-Wall Carbon Nanotube AFM Nanoprobes

Single-wall carbon nanotube (SWNT) nanofibrils were assembled onto conductive atomic force microscopy (AFM) probes with the help of dielectrophoresis (DEP). This process involved the application of a 10 V, 2 MHz, AC bias between a metal-coated AFM probe and a dilute suspension of SWNTs. This exerted a positive dielectrophoretic force onto the nanotubes that caused them to align while precipitating out onto the probe. The gradual removal of the AFM probe away from the SWNT suspension consolidated these nanotubes into nanofibrils with a high degree of alignment as demonstrated with polarization Raman experiments. By varying the pulling speed, immersion time, and concentration of the SWNT suspension, one can tailor the diameter and thus the stiffness of these probes. Precise length trimming of these nanofibrils was also performed by their gradual immersion and dissolution into a liquid that strongly interacted with nanotubes, (i.e., sodium dodecyl sulfate (SDS) solution). Vacuum annealing these nanoprobes at temperature up to 450 degree C further increased their stiffness and rendered them insoluble to SDS and all other aqueous media. Regrowth of a new SWNT nanofibril from the side or at the end of a previously grown SWNT nanofibril was also demonstrated by a repeated dielectrophoretic assembly at the desired immersion depth. These SWNT nanofibril-equipped AFM probes are electrically conductive and mechanically robust for use as high-aspect-ratio electrochemical nanoprobes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Site-specific Forest-assembly of Single-Wall Carbon Nanotubes on Electron-beam Patterned SiOx/Si Substrates

Based on electron-beam direct writing on the SiOx/Si substrates, favorable absorption sites for ferric cations (Fe3+ ions) were created on the surface oxide layer. This allowed Fe3+-assisted self-assembled arrays of single-wall carbon nanotube (SWNT) probes to be produced. Auger investigation indicated that the incident energetic electrons depleted oxygen, creating more dangling bonds around Si atoms at the surface of the SiOx layer. This resulted in a distinct difference in the friction forces from unexposed regions as measured by lateral force microscopy (LFM). Atomic force microscopy (AFM) affirmed that the irradiated domains absorbed considerably more Fe3+ ions upon immersion into pH 2.2 aqueous FeCl3 solution. This rendered a greater yield of FeO(OH)/FeOCl precipitates, primarily FeO(OH), upon subsequent washing with lightly basic dimethylformamide (DMF) solution. Such selective metalfunctionalization established the basis for the subsequent patterned forest-assembly of SWNTs as demonstrated by resonance Raman spectroscopy.

0 citations0 reviewsNo code linkedOpen access