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Brian F. Donovan

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Published work

2 published item(s)

preprint2020arXiv

A Numerical Fitting Routine for Frequency-domain Thermoreflectance Measurements of Nanoscale Material Systems having Arbitrary Geometries

In this work, we develop a numerical fitting routine to extract multiple thermal parameters using frequency-domain thermoreflectance (FDTR) for materials having non-standard, non-semi-infinite geometries. The numerical fitting routine is predicated on either a 2-D or 3-D finite element analysis that permits the inclusion of non semi-infinite boundary conditions, which can not be considered in the analytical solution to the heat diffusion equation in the frequency domain. We validate the fitting routine by comparing it to the analytical solution to the heat diffusion equation used within the wider literature for FDTR and known values of thermal conductivity for semi-infinite substrates (SiO2, Al2O3 and Si). We then demonstrate its capacity to extract the thermal properties of Si when etched into micropillars that have radii on the order of the pump beam. Experimental measurements of Si micropillars with circular cross-sections are provided and fit using the numerical fitting routine established as part of this work. Likewise, we show that the analytical solution is unsuitable for the extraction of thermal properties when the geometry deviates significantly from the standard semi-infinite case. This work is critical for measuring the thermal properties of materials having arbitrary geometries, including ultra-drawn glass fibers and laser gain media.

preprint2019arXiv

A Theoretical Paradigm for Thermal Rectification via Phonon Filtering and Energy Carrier Confinement

We provide a theoretical framework for the development of a solid-state thermal rectifier through a confinement in the available population of phonons on one side of an asymmetrically graded film stack. Using a modification of the phonon gas model to account for phonon filtering and population confinement, we demonstrate that for an ideal material, with low phonon anharmonicity, significant thermal rectification can be achieved even in the absence of ballistic phonon transport. This formalism is used to illustrate thermal rectification in a thin-film of diamond (1-5 nm) graded to dimensions > 1 μm exhibiting theoretical values of thermal rectification ratios between 0.75 and 6. Our theoretical formulation for thermal rectification is therefore expected to produce opportunities to design advanced solid-state devices that enable a variety of critical technologies.