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Brahim Dkhil

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Published work

9 published item(s)

preprint2022arXiv

Anti-polar state in BiFeO3/NdFeO3 superlattices

Antiferroelectrics are promising materials for high energy density capacitors and the search for environmentally-friendly and efficient systems is actively pursued. An elegant strategy to create and design new (anti)ferroic system relies on the use of nanoscale superlattices. We report here the use of such strategy and the fabrication of nanoscale BiFeO3/NdFeO3 superlattices and in depth characterization using high resolution X-ray diffraction and Transmission Electron Microscopy. The structural analysis at atomic scale demonstrates that such superlattices host anti-polar ordering most likely described by an antiferroelectric-like Pbnm symmetry. Temperature dependence of anti-polar state and structural transition further hint that the stability of the anti-polar state is controlled by the BiFeO3 layer thickness within the stacking and, in a more moderate way, by interlayer strain. Discovery of such polar arrangement in superlattices and the possible generalization to the whole rare-earth family pave the way to new platforms for energy storage application as well as nano-electronic devices.

preprint2022arXiv

Strain engineering of the magnetic anisotropy and magnetic moment in NdFeO3 epitaxial thin films

Strain engineering is a powerful mean for tuning the various functionalities of ABO3 perovskite oxide thin films. Rare-earth orthoferrite RFeO3 materials such as NdFeO3 (NFO) are of prime interest because of their intriguing magnetic properties as well as their technological potential applications especially as thin films. Here, using a large set of complementary and advanced techniques, we show that NFO epitaxial thin films, successfully grown by pulsed laser deposition on (001)-SrTiO3, show a strong magnetic anisotropy below a critical thickness tc of 54 nm, associated with the occurrence of structural modifications related to symmetry and domain pattern changes. By varying the tensile misfit strain through the decrease of film thickness below tc, the amplitudes of in and out-of-plane magnetization can be continuously tuned while their ratio stays constant. Furthermore, different low-temperature magnetic behaviors are evidenced for strained and relaxed films, suggesting that the strain-induced structural state impacts the magnetic phase stability.

preprint2020arXiv

A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$

Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.

preprint2019arXiv

Direct epitaxial growth of polar (1-x)HfO2-(x)ZrO2 ultra-thin films on Silicon

Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only achieved on non-Si substrates. Here we report direct epitaxy of polar phases on Si using pulsed laser deposition enabled via in situ scavenging of the native a-SiOx under ballistic conditions. On Si (111), polar rhombohedral (r)-phase and bulk monoclinic (m-) phase coexist, with the volume of the former increasing with increasing Zr concentration. R-phase is stabilized in the regions with a direct connection between the substrate and the film through the compressive strain provided by an interfacial crystalline c-SiO2 layer., The film relaxes to a bulk m-phase in regions where a-SiOx regrows. On Si (100), we observe polar orthorhombic o-phase coexisting with m-phase, stabilized by inhomogeneous strains at the intersection of monoclinic domains. This work provides fundamental insight into the conditions that lead to the preferential stabilization of r-, o- and m-phases.

preprint2014arXiv

Local electrical control of magnetic order and orientation by ferroelastic domain arrangements just above room temperature

Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific x-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetism and antiferromagnetism with a small electric field just above room temperature. Our results emphasize the importance of nanoscale ferroic domain structure to achieve enhanced coupling in artificial multiferroics.

preprint2013arXiv

Condensation of the atomic relaxation vibrations in lead-magnesium-niobate at $T=T^*$

We present neutron diffraction, dielectric permittivity and photoconductivity measurements, evidencing that lead-magnesium niobate experiences a diffuse phase transformation between the spherical glass and quadrupole glass phases, in the temperature interval between 400 K and 500 K, with the quadrupole phase possessing extremely high magnitudes of dielectric permittivity. Our analysis shows that the integral diffuse scattering intensity may serve as an order parameter for this transformation. Our experimental dielectric permittivity data support this choice. These data are important for the aplications desiring giant dielectric responses, in a wide temperature intervals and not related to electron's excitations.

preprint2013arXiv

Effect of a built-in electric field in asymmetric ferroelectric tunnel junctions

The contribution of a built-in electric field to ferroelectric phase transition in asymmetric ferroelectric tunnel junctions is studied using a multiscale thermodynamic model. It is demonstrated in details that there exists a critical thickness at which an unusual ferroelectric-\'\' polar non-ferroelectric\rq\rq phase transition occurs in asymmetric ferroelectric tunnel junctions. In the \'\' polar non-ferroelectric\rq\rq phase, there is only one non-switchable polarization which is caused by the competition between the depolarizing field and the built-in field, and closure-like domains are proposed to form to minimize the system energy. The transition temperature is found to decrease monotonically as the ferroelectric barrier thickness is decreased and the reduction becomes more significant for the thinner ferroelectric layers. As a matter of fact, the built-in electric field does not only result in smearing of phase transition but also forces the transition to take place at a reduced temperature. Such findings may impose a fundamental limit on the work temperature and thus should be further taken into account in the future ferroelectric tunnel junction-type or ferroelectric capacitor-type devices.

preprint2013arXiv

Genuine driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O3 antiferroelectric thin films

The polarization fatigue in (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thin films deposited onto silicon wafers is studied by investigating the effect of the peak/average/effective cycling voltage through varying the waveform of the electrical excitation. Interestingly, it is found that the fatigue endurance of the film is determined by the effective voltage of the external driving excitation rather than by the peak or average voltages. Our results can be well explained in the framework of the local phase decomposition model and indicate that the effective voltage should be considered as the genuine driving voltage determining the polarization fatigue in PLZT antiferroelectric films.

preprint2011arXiv

Multiple high-pressure phase transitions in BiFeO3

We investigate the high-pressure phase transitions in BiFeO3 by single crystal and powder x-ray diffraction, as well as single crystal Raman spectroscopy. Six phase transitions are reported in the 0-60 GPa range. At low pressures, up to 15 GPa, 4 transitions are evidenced at 4, 5, 7 and 11 GPa. In this range, the crystals display large unit cells and complex domain structures, which suggests a competition between complex tilt systems and possibly off-center cation displacements. The non polar Pnma phase remains stable over a large pressure range between 11 and 38 GPa, where the distortion (tilt angles) changes only little with pressure. The two high-pressure phase transitions at 38 and 48 GPa are marked by the occurence of larger unit cells and an increase of the distorsion away from the cubic parent perovskite cell. We find no evidence for a cubic phase at high pressure, nor indications that the structure tends to become cubic. The previously reported insulator-to-metal transition at 50 GPa appears to be symmetry breaking.