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Bing-Yang Cao

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cond-mat.mtrl-sci physics.app-ph

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preprint2022arXiv

Spectral Thermal Spreading Resistance of Wide Bandgap Semiconductors in Ballistic-Diffusive Regime

To develop efficient thermal management strategies for wide bandgap (WBG) semiconductor devices, it is essential to have a clear understanding of the heat transport process within the device and accurately predict the junction temperature. In this paper, we used the phonon Monte Carlo (MC) method with the phonon dispersion of various typical WBG semiconductors, including GaN, SiC, AlN, and \ce{β-Ga_2O_3}, to investigate the thermal spreading resistance in a ballistic-diffusive regime. It was found that when compared with Fourier's law-based predictions, the increase in the thermal resistance caused by ballistic effects was strongly related to different phonon dispersions. Based on the model deduced under the gray-medium approximation and the results of dispersion MC, we obtained a thermal resistance model that can well address the issues of thermal spreading and ballistic effects, and the influences of phonon dispersion. The model can be easily coupled with FEM based thermal analysis and applied to different materials. This paper can provide a clearer understanding of the influences of phonon dispersion on the thermal transport process, and it can be useful for the prediction of junction temperatures and the development of thermal management strategies for WBG semiconductor devices.

preprint2022arXiv

Thermal spreading resistance of GaN HEMTs with heat source heating studied by hybrid Monte Carlo-diffusion simulations

Exact assessment of thermal spreading resistance is of great importance to the thermal management of electronic devices, especially when completely considering the heat conduction process from the nanoscale heat source to the macroscopic scale heat sink. The existing simulation methods are either based on convectional Fourier's law or limited to small system sizes, making it difficult to accurately and efficiently study the cross-scale heat transfer. In this paper, a hybrid phonon Monte Carlo-diffusion method that couples phonon Monte Carlo (MC) method with Fourier's law by dividing the computational domain is adopted to analyze thermal spreading resistance in ballistic-diffusive regime. Compared with phonon MC simulation, the junction temperature of the hybrid method has the same precision, while the time costs could be reduced up to 2 orders of magnitude at most. Furthermore, the simulation results indicate that the heating scheme has a remarkable impact on phonon transport. The thermal resistance of the heat source (HS) scheme can be larger than that of the heat flux (HF) scheme, which is opposite from the prediction of Fourier's law. In the HS scheme, the enhanced phonon-boundary scattering counteracts the broadening of the heat source, leading to a stronger ballistic effect as the heat source thickness decreases. The conclusion is verified by a one-dimensional thermal resistance model. This work has opened up an opportunity for the fast and extensive thermal modeling of cross-scale heat transfer in electronic devices and highlighted the influence of heating schemes.

preprint2021arXiv

Topological effects of phonons in GaN and AlxGa1-xN: A potential perspective for tuning phonon transport

Tuning thermal transport in semiconductor nanostructures is of great significance for thermal management in information and power electronics. With excellent transport properties, such as ballistic transport, immunity to point defects and disorders, and forbidden backscattering, topological phonon surface states show remarkable potential in addressing this issue. Herein, topological phonon analyses are performed on hexagonal wurtzite GaN to check the topological characteristics of phonons. And other nitrides of the same family, i.e., AlN and AlGaN alloy, are also calculated from a topological phonon phase transition perspective. With the aid of first-principle calculations and topological phonon theory, Weyl phonon states, which host surfaces states without backscattering, are investigated for all these materials. The results show that there is no nontrivial topological phonon state in GaN. However, by introducing Al atoms, i.e., in wurtzite type AlN and AlGaN, more than one Weyl phonon point is found, confirmed by obvious topological characteristics, including non-zero integer topological charges, source/sink in Berry curvature distributions, surface local density of states and surface arcs. As AlN and AlGaN are typical materials in AlGaN/GaN heterostructure based electronics, the existence of topological phonon states in them will benefit thermal management by facilitating the design of one-way interfacial phonon transport without backscattering.