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Bin Ouyang

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Published work

6 published item(s)

preprint2022arXiv

Machine-learning rationalization and prediction of solid-state synthesis conditions

There currently exist no quantitative methods to determine the appropriate conditions for solid-state synthesis. This not only hinders the experimental realization of novel materials but also complicates the interpretation and understanding of solid-state reaction mechanisms. Here, we demonstrate a machine-learning approach that predicts synthesis conditions using large solid-state synthesis datasets text-mined from scientific journal articles. Using feature importance ranking analysis, we discovered that optimal heating temperatures have strong correlations with the stability of precursor materials quantified using melting points and formation energies ($ΔG_f$, $ΔH_f$). In contrast, features derived from the thermodynamics of synthesis-related reactions did not directly correlate to the chosen heating temperatures. This correlation between optimal solid-state heating temperature and precursor stability extends Tamman's rule from intermetallics to oxide systems, suggesting the importance of reaction kinetics in determining synthesis conditions. Heating times are shown to be strongly correlated with the chosen experimental procedures and instrument setups, which may be indicative of human bias in the dataset. Using these predictive features, we constructed machine-learning models with good performance and general applicability to predict the conditions required to synthesize diverse chemical systems. Codes and data used in this work can be found at: https://github.com/CederGroupHub/s4.

preprint2015arXiv

Covalent pathways in engineering h-BN supported graphene

Cross-planar di-vacancies (CPDVs) within stacked graphene hexagonal boron nitride (h-BN) heterostructures provide stabilized covalent links to bridge adjacent graphene and h-BN sheets. It was shown that the CPDVs serve as focal points for cross-planar atom transport between graphene and h-BN, and the chemical nature of interlayer links along with associated cross-planar migration pathways at these defects can be predictively manipulated through modulation of the chemical environment and charge engineering, to achieve consistent B or N doping and simultaneous healing of graphene. The present study proposed a viable approach integrating irradiation, chemical and charge engineering, to produce high-quality graphene with tunable electronic and electrochemical properties, using the h-BN substrate.

preprint2015arXiv

Energetics and kinetics of vacancies in monolayer graphene boron nitride heterostructures

Graphene and boron nitride (GPBN) heterostructures provide a viable way to realize tunable bandgap, promising new opportunities in graphene-based nanoelectronic and optoelectronic devices. In the present study, we investigated the interplay between vacancies and graphene/h-BN interfaces in monolayer GPBN heterostructures. The energetics and kinetics of monovacancies and divacancies in monolayer GPBN heterostructures were examined using first-principle calculations. The interfaces were shown to be preferential locations for vacancy segregation. Meanwhile the kinetics of vacancies was found to be noticeably modified at interfaces, evidenced by the Minimum Energy Paths (MEPs) and associated migration barriers calculations. The role of interfacial bonding configurations, energy states and polarization on the formation and diffusion of vacancies were discussed. Additionally we demonstrated that it is important to recognize the dissimilarities in the diffusion prefactor for different vacancies for accurate determination of the vacancy diffusion coefficient. Our results provide essential data for the modeling of vacancies in GPBN heterostructures, and important insights towards the precise engineering of defects, interfaces and quantum domains in the design of GPBN-based devices.

preprint2015arXiv

First-Principle Study of Dislocation Slips in Impurity Doped Graphene

Employing density-functional theory (DFT) calculations, the generalized-stacking-fault energy (GSFE) curves along two crystallographic slips, glide and shuffle, for both pristine graphene and impurity of boron (B) or nitrogen (N) doped graphene were examined. The effects of B and N doping on the GSFE were clarified and correlated with local electron interactions and bonding configurations. The GSFE data were then used to analyze dislocation dipole and core structure, and subsequently combined with the Peierls-Nabarro (P-N) model to examine the role of doping on several key characteristics of dislocations in graphene. We showed that the GSFE curve may be significantly altered by the presence of dopants, which subsequently leads to profound modulations of dislocation properties, such as increasing spontaneous pair-annihilation distance and reducing resistance to dislocation slip. Our results indicate that doping can play an important role in controlling dislocation density and microscopic plasticity in graphene, thereby providing critical insights for dopant-mediated defect engineering in graphene.

preprint2015arXiv

The Role of Low-lying Optical Phonons in Lattice Thermal Conductance of Rare-earth Pyrochlores: A First-principle Study

Rare-earth pyrochlores, commonly exhibiting anomalously low lattice thermal conductivities, are considered as promising topcoat materials for thermal barrier coatings. However the structural origin underlying their low thermal conductivities remain unclear. In the present study, we investigated the phonon properties of two groups of RE pyrochlores, Ln2Zr2O7 (Ln = La, Nd, Sm, Gd) and Gd2T2O7 (T = Zr, Hf, Sn, Pb) employing density functional theory and quasi harmonic approximation. Through the relaxation time approximation (RTA) with Debye model, the thermal conductivities of those RE pyrochlores were predicted, showing good agreement with experimental measurements. The low thermal conductivities of RE pyrochlores were shown to largely come from the interference between the low-lying optical branches and acoustic branches. The structural origin underlying the low-lying optical branches was then clarified and the competition between scattering processes in transverse and longitude acoustic branches was discussed.

preprint2013arXiv

Strain engineering of magnetic states of vacancy-decorated hexagonal boron nitride

Novel materials with tunable magnetic states play a significant role in the development of next-generation spintronic devices. In this paper, we examine the role of biaxial strain on the electronic properties of vacancy-decorated hexagonal boron nitride (h-BN) monolayers using density functional theory calculations. We found that the strain can lead to switching of the magnetic state for h-BN monolayers with boron vacancy or divacancy. Our findings promise a new route for the operation of low-dimensional spintronic devices.