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Bertold Rasche

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other

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preprint2020arXiv

Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods

We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover novel types of topological insulators such as dual ones or switchable ones in phase change materials. Moreover, we introduce procedures to spatially map potential fluctuations by scanning tunneling spectroscopy and to identify topological edge states in weak topological insulators.

preprint2016arXiv

Electronic Structure of the Dark Surface of the Weak Topological Insulator Bi14Rh3I9

The compound Bi14Rh3I9 consists of ionic stacks of intermetallic [(Bi4Rh)3I]2+ and insulating [Bi2I8]2- layers and has been identified to be a weak topological insulator. Scanning tunneling microscopy revealed the robust edge states at all step edges of the cationic layer as a topological fingerprint. However, these edge states are found 0.25 eV below the Fermi level which is an obstacle for transport experiments. Here, we address this obstacle by comparing results of density functional slab calculations with scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy. We show that the n-type doping of the intermetallic layer is intrinsically caused by the polar surface and is well screened towards the bulk. In contrast, the anionic "spacer" layer shows a gap at the Fermi level, both, on the surface and in the bulk, i.e. it is not surface-doped due to iodine desorption. The well screened surface dipole implies that a buried edge state, probably already below a single spacer layer, is located at the Fermi level. Consequently, a multilayer step covered by a spacer layer could provide access to the transport properties of the topological edge states. In addition, we find a lateral electronic modulation of the topologically non-trivial surface layer which is traced back to the coupling with the underlying zigzag chain structure of the spacer layer.

preprint2015arXiv

Correlation between topological band character and chemical bonding in a $\mathbf{Bi_{14}Rh_{3}I_{9}}$-based family of insulators

Recently the presence of topologically protected edge-states in Bi$_{14}$Rh$_3$I$_9$ was confirmed by scanning tunnelling microscopy consolidating this compound as a weak 3D topological insulator (TI). Here, we present a density-functional-theory-based study on a family of TIs derived from the Bi$_{14}$Rh$_3$I$_9$ parent structure via substitution of Ru, Pd, Os, Ir and Pt for Rh. Comparative analysis of the band-structures throughout the entire series is done by means of a unified minimalistic tight-binding model that evinces strong similarity between the quantum-spin-Hall (QSH) layer in Bi$_{14}$Rh$_3$I$_9$ and graphene in terms of $p_z$-molecular orbitals. Topologically non-trivial energy gaps are found for the Ir-, Rh-, Pt- and Pd-based systems, whereas the Os- and Ru-systems remain trivial. Furthermore, the energy position of the metal $d$-band centre is identified as the parameter which governs the evolution of the topological character of the band structure through the whole family of TIs. The $d$-band position is shown to correlate with the chemical bonding within the QSH layers, thus revealing how the chemical nature of the constituents affects the topological band character.

preprint2015arXiv

Sub-nm wide electron channels protected by topology

Helical locking of spin and momentum and prohibited backscattering are the key properties of topologically protected states. They are expected to enable novel types of information processing such as spintronics by providing pure spin currents, or fault tolerant quantum computation by using the Majorana fermions at interfaces of topological states with superconductors. So far, the required helical conduction channels used to realize Majorana fermions are generated through application of an axial magnetic field to conventional semiconductor nanowires. Avoiding the magnetic field enhances the possibilities for circuit design significantly. Here, we show that sub-nanometer wide electron channels with natural helicity are present at surface step-edges of the recently discovered topological insulator Bi14Rh3I9. Scanning tunneling spectroscopy reveals the electron channels to be continuous in both energy and space within a large band gap of 200 meV, thereby, evidencing its non-trivial topology. The absence of these channels in the closely related, but topologically trivial insulator Bi13Pt3I7 corroborates the channels' topological nature. The backscatter-free electron channels are a direct consequence of Bi14Rh3I9's structure, a stack of 2D topologically insulating, graphene-like planes separated by trivial insulators. We demonstrate that the surface of Bi14Rh3I9 can be engraved using an atomic force microscope, allowing networks of protected channels to be patterned with nm precision.

preprint2013arXiv

Stacked topological insulator built from bismuth-based graphene sheet analogues

Commonly materials are classified as either electrical conductors or insulators. The theoretical discovery of topological insulators (TIs) in 2005 has fundamentally challenged this dichotomy. In a TI, spin-orbit interaction generates a non-trivial topology of the electronic band-structure dictating that its bulk is perfectly insulating, while its surface is fully conducting. The first TI candidate material put forward -graphene- is of limited practical use since its weak spin-orbit interactions produce a band-gap of ~0.01K. Recent reinvestigation of Bi2Se3 and Bi2Te3, however, have firmly categorized these materials as strong three-dimensional TI's. We have synthesized the first bulk material belonging to an entirely different, weak, topological class, built from stacks of two-dimensional TI's: Bi14Rh3I9. Its Bi-Rh sheets are graphene analogs, but with a honeycomb net composed of RhBi8-cubes rather than carbon atoms. The strong bismuth-related spin-orbit interaction renders each graphene-like layer a TI with a 2400K band-gap.