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Benoit Gaury

Benoit Gaury appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2021arXiv

Tkwant: a software package for time-dependent quantum transport

Tkwant is a Python package for the simulation of quantum nanoelectronics devices to which external time-dependent perturbations are applied. Tkwant is an extension of the Kwant package (https://kwant-project.org/) and can handle the same types of systems: discrete tight-binding-like models that consist of an arbitrary central region connected to semi-infinite electrodes. The problem is genuinely many-body even in the absence of interactions and is treated within the non-equilibrium Keldysh formalism. Examples of Tkwant applications include the propagation of plasmons generated by voltage pulses, propagation of excitations in the quantum Hall regime, spectroscopy of Majorana fermions in semiconducting nanowires, current-induced skyrmion motion in spintronic devices, multiple Andreev reflection, Floquet topological insulators, thermoelectric effects, and more. The code has been designed to be easy to use and modular. Tkwant is free software distributed under a BSD license and can be found at https://tkwant.kwant-project.org/.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Charged grain boundaries reduce the open circuit voltage of polycrystalline solar cells--An analytical description

Analytic expressions are presented for the dark current-voltage relation $J(V)$ of a $pn^+$ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the dark $J(V)$ can be used to determine the open circuit potential $V_{\rm oc}$ of an illuminated junction for a given short-circuit current density $J_{\rm sc}$ . A precise relation between the grain boundary properties and $V_{\rm oc}$ is provided, advancing the understanding of the influence of grain boundaries on the efficiency of thin film polycrystalline photovoltaics like CdTe and $\mathrm{Cu(In,Ga)Se_2}$.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Depletion region surface effects in electron beam induced current measurements

Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the $p$-$n$ junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a reduced and nonuniform EBIC lineshape for excitations in the depletion region. Motivated by this, we present a model of the EBIC response for excitations in the depletion region which includes the effects of surface recombination from both charge-neutral and charged surfaces. For neutral surfaces we present a simple analytical formula which describes the numerical data well, while the charged surface response depends qualitatively on the location of the surface Fermi level relative to the bulk Fermi level. We find the experimental data on FIB-prepared Si solar cells is most consistent with a charged surface, and discuss the implications for EBIC experiments on polycrystalline materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Probing surface recombination velocities in semiconductors using two-photon microscopy

The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows for better measurements of bulk and subsurface interfaces properties. Here we analyze the diffusion problem related to this optical technique. Our three-dimensional treatment enables us to separate lifetime (recombination) from transport effects (diffusion) in the photoluminescence intensity. It also allows us to consider surface recombination occurring at a variety of geometries: a single plane (representing an isolated exposed or buried interface), two parallel planes (representing two inequivalent interfaces), and a spherical surface (representing the enclosing surface of a grain boundary). We provide fully analytical results and scalings directly amenable to data fitting, and apply those to experimental data collected on heteroepitaxial CdTe/ZnTe/Si.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A computational approach to quantum noise in time-dependent nanoelectronic devices

We derive simple expressions that relate the noise and correlation properties of a general time-dependent quantum conductor to the wave functions of the system. The formalism provides a practical route for numerical calculations of quantum noise in an externally driven system. We illustrate the approach with numerical calculations of the noise properties associated to a voltage pulse applied on a one-dimensional conductor. The methodology is however fully general and can be used for a large class of mesoscopic conductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Manipulating Andreev and Majorana Bound States with microwaves

We study the interplay between Andreev (Majorana) bound states that form at the boundary of a (topological) superconductor and a train of microwave pulses. We find that the extra dynamical phase coming from the pulses can shift the phase of the Andreev reflection, resulting in the appear- ance of dynamical Andreev states. As an application we study the presence of the zero bias peak in the differential conductance of a normal-topological superconductor junction - the simplest, yet somehow ambiguous, experimental signature for Majorana states. Adding microwave radiation to the measuring electrodes provides an unambiguous probe of the Andreev nature of the zero bias peak.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

AC Josephson effect without superconductivity

Superconductivity derives its most salient features from the coherence of its macroscopic wave function. The associated physical phenomena have now moved from exotic subjects to fundamental building blocks for quantum circuits such as qubits or single photonic modes. Here, we theoretically find that the AC Josephson effect---which transforms a DC voltage $V_b$ into an oscillating signal $cos(2eV_b t/ \hbar)$---has a mesoscopic counterpart in normal conductors. We show that on applying a DC voltage $V_b$ to an electronic interferometer, there exists a universal transient regime where the current oscillates at frequency $eV_b/h$. This effect is not limited by a superconducting gap and could, in principle, be used to produce tunable AC signals in the elusive $0.1-10$ THz "terahertz gap".

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dynamical control of interference using voltage pulses in the quantum regime

As a general trend, nanoelectronics experiments are shifting toward frequencies so high that they become comparable to the device's internal characteristic time scales, resulting in new opportunities for studying the dynamical aspects of quantum mechanics. Here we theoretically study how a voltage pulse (in the quantum regime) propagates through an electronic interferometer (Fabry- Perot or Mach-Zehnder). We show that extremely fast pulses provide a conceptually new tool for manipulating quantum information: the possibility to dynamically engineer the interference pattern of a quantum system. Striking physical signatures are associated with this new regime: restoration of the interference in presence of large bias voltages; negative currents with respect to the direction of propagation of the voltage pulse; and oscillation of the total transmitted charge with the total number of injected electrons. The present findings have been made possible by the recent unlocking of our capability for simulating time-resolved quantum nanoelectronics of large systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Numerical simulations of time resolved quantum electronics

This paper discusses the technical aspects - mathematical and numerical - associated with the numerical simulations of a mesoscopic system in the time domain (i.e. beyond the single frequency AC limit). After a short review of the state of the art, we develop a theoretical framework for the calculation of time resolved observables in a general multiterminal system subject to an arbitrary time dependent perturbation (oscillating electrostatic gates, voltage pulses, time-vaying magnetic fields) The approach is mathematically equivalent to (i) the time dependent scattering formalism, (ii) the time resolved Non Equilibrium Green Function (NEGF) formalism and (iii) the partition-free approach. The central object of our theory is a wave function that obeys a simple Schrodinger equation with an additional source term that accounts for the electrons injected from the electrodes. The time resolved observables (current, density. . .) and the (inelastic) scattering matrix are simply expressed in term of this wave function. We use our approach to develop a numerical technique for simulating time resolved quantum transport. We find that the use of this wave function is advantageous for numerical simulations resulting in a speed up of many orders of magnitude with respect to the direct integration of NEGF equations. Our technique allows one to simulate realistic situations beyond simple models, a subject that was until now beyond the simulation capabilities of available approaches.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Stopping electrons with radio-frequency pulses in the quantum Hall regime

Most functionalities of modern electronic circuits rely on the possibility to modify the path fol- lowed by the electrons using, e.g. field effect transistors. Here we discuss the interplay between the modification of this path and the quantum dynamics of the electronic flow. Specifically, we study the propagation of charge pulses through the edge states of a two-dimensional electron gas in the quantum Hall regime. By sending radio-frequency (RF) excitations on a top gate capacitively coupled to the electron gas, we manipulate these edge state dynamically. We find that a fast RF change of the gate voltage can stop the propagation of the charge pulse inside the sample. This effect is intimately linked to the vanishing velocity of bulk states in the quantum Hall regime and the peculiar connection between momentum and transverse confinement of Landau levels. Our findings suggest new possibilities for stopping, releasing and switching the trajectory of charge pulses in quantum Hall systems.

0 citations0 reviewsNo code linkedOpen access