Researcher profile

Bengt Nilsson

Bengt Nilsson contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2016arXiv

Online Clique Clustering

Clique clustering is the problem of partitioning the vertices of a graph into disjoint clusters, where each cluster forms a clique in the graph, while optimizing some objective function. In online clustering, the input graph is given one vertex at a time, and any vertices that have previously been clustered together are not allowed to be separated. The goal is to maintain a clustering with an objective value close to the optimal solution. For the variant where we want to maximize the number of edges in the clusters, we propose an online strategy based on the doubling technique. It has an asymptotic competitive ratio at most 15.646 and an absolute competitive ratio at most 22.641. We also show that no deterministic strategy can have an asymptotic competitive ratio better than 6. For the variant where we want to minimize the number of edges between clusters, we show that the deterministic competitive ratio of the problem is $n-ω(1)$, where n is the number of vertices in the graph.

preprint2012arXiv

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation.