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Researcher profile

Belita Koiller

Belita Koiller contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.othercond-mat.stat-mech

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Published work

9 published item(s)

preprint2014arXiv

Dark State Adiabatic Passage with spin-one particles

Adiabatic transport of information is a widely invoked resource in connection with quantum information processing and distribution. The study of adiabatic transport via spin-half chains or clusters is standard in the literature, while in practice the true realisation of a completely isolated two-level quantum system is not achievable. We explore here, theoretically, the extension of spin-half chain models to higher spins. Considering arrangements of three spin-one particles, we show that adiabatic transport, specifically a generalisation of the Dark State Adiabatic Passage procedure, is applicable to spin-one systems. We thus demonstrate a qutrit state transfer protocol. We discuss possible ways to physically implement this protocol, considering quantum dot and nitrogen-vacancy implementations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Splitting Valleys in Si/SiO$_2$: Identification and Control of Interface States

Interface states in a silicon/barrier junction break the silicon valley degeneracy near the interface, a desirable feature for some Si quantum electronics applications. Within a minimal multivalley tight-binding model in one dimension, we inspect here the spatial extent of these states into the Si and the barrier materials, as well as favorable conditions for its spontaneous formation. Our approach---based on Green's-function renormalization-decimation techniques---is asymptotically exact for the infinite chain and shows the formation of these states regardless of whether or not a confining electric field is applied. The renormalization language naturally leads to the central role played by the chemical bond of the atoms immediately across the interface. In the adopted decimation procedure, the convergence rate to a fixed point directly relates the valley splitting and the spread of the wave function, consequently connecting the splitting to geometrical experimental parameters such as the capacitance of a two-dimensional electron gas---explicitly calculated here. This should serve as a probe to identify such states as a mechanism for enhanced valley splitting.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

An Exchange-Coupled Donor Molecule in Silicon

Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single impurity atom [8, 9] allowing the predicted single-donor energy spectrum to be checked by an electrical transport measurement. Generalizing the concept, a donor pair may behave as a hydrogen molecule analogue. However, the molecular quantum mechanical solution only takes us so far and a detailed understanding of the electronic structure of these molecular systems is a challenge to be overcome. Here we present a combined experimental-theoretical demonstration of the energy spectrum of a strongly interacting donor pair in the channel of a silicon nanotransistor and show the first observation of measurable two-donor exchange coupling. Moreover, the analysis of the three charge states of the pair shows evidence of a simultaneous enhancement of the binding and charging energies with respect to the single donor spectrum. The measured data are accurately matched by results obtained in an effective mass theory incorporating the Bloch states multiplicity in Si, a central cell corrected donor potential and a full configuration interaction treatment of the 2-electron spectrum. Our data describe the basic 2-qubit entanglement element in Kane's quantum processing scheme [1], namely exchange coupling, implemented here in the range of molecular hybridization.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Driven flow with exclusion and transport in graphene-like structures

The totally asymmetric simple exclusion process (TASEP), a well-known model in its strictly one-dimensional (chain) version, is generalized to cylinder (nanotube) and ribbon (nanoribbon) geometries. A mean-field theoretical description is given for very narrow ribbons ("necklaces"), and nanotubes. For specific configurations of bond transmissivity rates, and for a variety of boundary conditions, theory predicts equivalent steady state behavior between (sublattices on) these structures and chains. This is verified by numerical simulations, to excellent accuracy, by evaluating steady-state currents. We also numerically treat ribbons of general width. We examine the adequacy of this model to the description of electronic transport in carbon nanotubes and nanoribbons, or specifically-designed quantum dot arrays.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface

We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor practically ionized. Valley splitting at the interface occurs due to the valley-orbit coupling, V_vo^I = |V_vo^I| e^{i theta}. At intermediate electric fields, close to a characteristic shuttling field, the electron states may constitute hybridized states with valley compositions different from the donor and the interface ground states. The full spectrum of energy levels shows crossings and anti-crossings as the field varies. The degree of level repulsion, thus the width of the anti-crossing gap, depends on the relative valley compositions, which vary with |V_vo^I|, theta and the interface-donor distance. We focus on the valley configurations of the states involved in the donor-interface tunneling process, given by the anti-crossing of the three lowest eigenstates. A sequence of two anti-crossings takes place and the complex phase theta affects the symmetries of the eigenstates and level anti-crossing gaps. We discuss the implications of our results on the practical manipulation of donor electrons in Si nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Valley-based noise-resistant quantum computation using Si quantum dots

We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctuations is determined by intervalley processes and is greatly reduced as compared to conventional spin and charge qubits. We describe a valley echo for further noise suppression.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Intervalley coupling for interface-bound electrons in silicon: An effective mass study

Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may be mitigated near an interface between Si and a barrier material, where intervalley scattering may couple states in the conduction ground state, leading to nondegenerate orbital ground and first excited states. The level splitting is experimentally found to have a strong sample dependence, varying by orders of magnitude for different interfaces and samples. The basic physical mechanisms leading to such coupling in different systems are addressed. We expand our recent study based on an effective mass approach, incorporating the full plane-wave expansions of the Bloch functions at the conduction band minima. Physical insights emerge naturally from a simple Si/barrier model. In particular, we present a clear comparison between ours and different approximations and formalisms adopted in the literature and establish the applicability of these approximations in different physical scenarios.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantum and classical correlations in antiferromagnetic chains and the realization of Werner states with spins

We investigate pairwise correlation properties of the ground state (GS) of finite antiferromagnetic (AFM) spin chains described by the Heisenberg model. The exchange coupling is restricted to nearest neighbor spins, and is constant $J_0$ except for a pair of neighboring sites, where the coupling $J_1$ may vary. We identify a rich variety of possible behaviors for different measures of pairwise (quantum and classical) correlations and entanglement in the GS of such spin chain. Varying a single coupling affects the degree of correlation between all spin pairs, indicating possible control over such correlations by tuning $J_1$. We also show that a class of two spin states constitutes exact spin realizations of Werner states (WS). Apart from the basic and theoretical aspects, this opens concrete alternatives for experimentally probing non-classical correlations in condensed matter systems, as well as for experimental realizations of a WS via a single tunable exchange coupling in a AFM chain.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates.

0 citations0 reviewsNo code linkedOpen access