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Source author record

Baruch Feldman

Baruch Feldman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciComputational Engineering, Finance, and SciencePerformancephysics.comp-ph

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Published work

6 published item(s)

preprint2016arXiv

A partitioned shift-without-invert algorithm to improve parallel eigensolution efficiency in real-space electronic transport

We present an eigenspectrum partitioning scheme without inversion for the recently described real-space electronic transport code, TRANSEC. The primary advantage of TRANSEC is its highly parallel algorithm, which enables studying conductance in large systems. The present scheme adds a new source of parallelization, significantly enhancing TRANSEC's parallel scalability, especially for systems with many electrons. In principle, partitioning could enable super-linear parallel speedup, as we demonstrate in calculations within TRANSEC. In practical cases, we report better than five-fold improvement in CPU time and similar improvements in wall time, compared to previously-published large calculations. Importantly, the suggested scheme is relatively simple to implement. It can be useful for general large Hermitian or weakly non-Hermitian eigenvalue problems, whenever relatively accurate inversion via direct or iterative linear solvers is impractical.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A real-space method for highly parallelizable electronic transport calculations

We present a real-space method for first-principles nano-scale electronic transport calculations. We use the non-equilibrium Green's function method with density functional theory and implement absorbing boundary conditions (ABCs, also known as complex absorbing potentials, or CAPs) to represent the effects of the semi-infinite leads. In real space, the Kohn-Sham Hamiltonian matrix is highly sparse. As a result, the transport problem parallelizes naturally and can scale favorably with system size, enabling the computation of conductance in relatively large molecular junction models. Our use of ABCs circumvents the demanding task of explicitly calculating the leads' self-energies from surface Green's functions, and is expected to be more accurate than the use of the jellium approximation. In addition, we take advantage of the sparsity in real space to solve efficiently for the Green's function over the entire energy range relevant to low-bias transport. We illustrate the advantages of our method with calculations on several challenging test systems and find good agreement with reference calculation results.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

First Principle-based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors

Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive geometries. In this paper, we explore a similar architecture for aggressively scaled devices with the channel consisting of doped carbon nanotubes (CNTs). Gate all around (GAA) field effect transistor (FET) structures are investigated for n- and p-type doping. Current-voltage characteristics and sub-threshold characteristics for a CNTbased junctionless FET is compared with a junctionless silicon nanowire (SiNW) FET with comparable dimensions. Despite the higher on-current of the CNT channels, the device characteristics are poorer compared to the silicon devices due to the smaller CNT band gap.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires

Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a cross-platform quantum transport computation tool. Using first-principles electronic structure, it allows for flexible and efficient calculations of materials transport properties and realistic device simulations to extract current-voltage and transfer characteristics. We apply this computational method to the calculation of the mean free path in silicon nanowires with dopant and surface oxygen impurities. The dependence of transport on basis set is established, with the optimized double zeta polarized basis giving a reasonable compromise between converged results and efficiency. The current-voltage characteristics of ultrascaled (3 nm length) nanowire-based transistors with p-i-p and p-n-p doping profiles are also investigated. It is found that charge self-consistency affects the device characteristics more significantly than the choice of the basis set. These devices yield source-drain tunneling currents in the range of 0.5 nA (p-n-p junction) to 2 nA (p-i-p junction), implying that junctioned transistor designs at these length scales would likely fail to keep carriers out of the channel in the off-state.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Grain boundary effects on electronic transport in metals

We present quantum-based simulations of single grain boundary reflectivity of electrons in metals, Cu and Ag. We examine twin and non-twin grain boundaries using non-equilibrium Green's function and first principles methods. We also investigate the mechanism of reflectivity in grain boundaries by modeling atomic vacancies, disorder, and orientation and find that the change in grain orientation and disorder in the boundary itself both contribute significantly to reflectivity. We find that grain boundary reflectivity may vary widely depending on the grain boundary structure consistent with experimental results. Finally, we examine the reflectivity from multiple grain boundaries and find that grain boundary reflectivity may depend on neighboring grain boundaries. This study based on detailed numerical techniques reveals some potential limitations in the independent grain boundary assumptions of the Mayadas-Shatzkes model.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Simulations of gated Si nanowires and 3-nm junctionless transistors

Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are that Si-based transistors are physically possible without major changes in design philosophy at scales of ~1 nm wire diameter and ~3 nm gate length, and that the junctionless transistor may be the only physically sensible design at these length scales. We also present investigations into atomic-level design factors such as dopant positioning and concentration.

0 citations0 reviewsNo code linkedOpen access