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Researcher profile

Baobing Zheng

Baobing Zheng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nn

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Published work

4 published item(s)

preprint2021arXiv

Floquet Valley-Polarized Quantum Anomalous Hall State in Nonmagnetic Heterobilayers

The valley-polarized quantum anomalous Hall (VQAH) state, which forwards a strategy for combining valleytronics and spintronics with nontrivial topology, attracts intensive interest in condensed-matter physics. So far, the explored VQAH states have still been limited to magnetic systems. Here, using the low-energy effective model and Floquet theorem, we propose a different mechanism to realize the Floquet VQAH state in nonmagnetic heterobilayers under light irradiation. We then realize this proposal via first-principles calculations in transition metal dichalcogenide heterobilayers, which initially possess the time-reversal invariant valley quantum spin Hall (VQSH) state. By irradiating circularly polarized light, the time-reversal invariant VQSH state can evolve into the VQAH state, behaving as an optically switchable topological spin-valley filter. These findings not only offer a rational scheme to realize the VQAH state without magnetic orders, but also pave a fascinating path for designing topological spintronic and valleytronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Magnetic field induced Valley-Polarized Quantum Anomalous Hall Effects in Ferromagnetic van der Waals Heterostructures

The valley-polarized quantum anomalous Hall effect (VQAHE) attracts intensive interest since it uniquely combines valleytronics and spintronics with nontrivial band topology. Here, based on first-principles calculations and Wannier-function-based tight-binding (WFTB) model, we reveal that valley-based Hall effects and especially the VQAHE induced by external magnetic fields can occur in two-dimensional (2D) ferromagnetic van der Waals heterostructures (vdWHs). The results show that considerable valley-splitting derived from the Zeeman exchange energy drives these vdWHs generating the valley anomalous Hall effect and then the VQAHE. The chiral edge states and quantized Hall conductance are utilized to confirm the presence of VQAHE. Besides, it is also found that external electric fields (or tuning interlayer distances) can facilitate the realization of VQAHE, and thus we present a phase diagram in a broad parameter regime of magnetic fields and electric fields (or interlayer distances). Our work not only offers a class of ferromagnetic vdWHs to realize various valley-based Hall phases, but also can guide advancements for designing topological devices with spin-valley filtering effects based on the VQAHE.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Photoinduced Quantum Anomalous Hall States in the Topological Anderson Insulator

The realization of the quantum anomalous Hall (QAH) effect without magnetic doping attracts intensive interest since magnetically doped topological insulators usually possess inhomogeneity of ferromagnetic order. Here, we propose a different strategy to realize intriguing QAH states arising from the interplay of light and non-magnetic disorder in two-dimensional topologically trivial systems. By combining the Born approximation and Floquet theory, we show that a time-reversal invariant disorder-induced topological insulator, known as the topological Anderson insulator (TAI), would evolve into a time-reversal broken TAI and then into a QAH insulator by shining circularly polarized light. We utilize spin and charge Hall conductivities, which can be measured in experiments directly, to distinguish these three different topological phases. This work not only offers an exciting opportunity to realize the high-temperature QAH effect without magnetic orders, but also is important for applications of topological states to spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Intrinsic quantum anomalous Hall phase induced by proximity in germanene/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure

A van der Waals heterostructure combined with intrinsic magnetism and topological orders have recently paved attractive avenues to realize quantum anomalous Hall effects. In this work, using first-principles calculations and effective model analysis, we propose that the robust quantum anomalous Hall states with sizable band gaps emerge in the van der Waals heterostructure of germanene/Cr$_2$Ge$_2$Te$_6$. This heterostructure possesses high thermodynamic stability, thus facilitating its experimental fabrication. Furthermore, we uncover that the proximity effect enhances the coupling between the germanene and Cr$_2$Ge$_2$Te$_6$ layers, inducing the nontrivial band gaps in a wide range from 29 meV to 72 meV. The chiral edge states inside the band gap, leading to Hall conductance quantized to $-e^2/h$, are clearly visible. This findings provide an ideal candidate to detect the quantum anomalous Hall states and realize further applications to nontrivial quantum transport at a high temperature.

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