Researcher profile

B. S. Kang

B. S. Kang contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2014arXiv

Observability of the scalar Aharonov-Bohm effect inside a 3D Faraday cage with time-varying exterior charges and masses

In this paper we investigate the scalar Aharonov-Bohm (AB) effect in two of its forms, i.e., its electric form and its gravitational form. The standard form of the electric AB effect involves having particles (such as electrons) move in regions with zero electric field but different electric potentials. When a particle is recombined with itself, it will have a different phase, which can show up as a change in the way the single particle interferes with itself when it is recombined with itself. In the case where one has quasi-static fields and potentials, the particle will invariably encounter fringing fields, which makes the theoretical and experimental status of the electric AB effect much less clear than that of the magnetic (or vector) AB effect. Here we propose using time varying fields outside of a spherical shell, and potentials inside a spherical shell to experimentally test the scalar AB effect. In our proposal a quantum system will always be in a field-free region but subjected to a non-zero time-varying potentials. Furthermore, our system will not be spatially split and brought back together as in the magnetic AB experiment. Therefore there is no spatial interference and hence no shift in a spatial interference pattern to observe. Rather, there arises purely temporal interference phenomena. As in the magnetic AB experiments, these effects are non-classical. We present two versions of this idea: (i) a Josephson temporal interferometry experiment inside a superconducting spherical shell with a time-varying surface charge; (ii) a two-level atom experiment in which the atomic spectrum acquires FM sidebands when it is placed inside a spherical shell whose exterior mass is sinusoidally varying with time. The former leads to a time-varying internal magnetic field, and the latter leads to a time-varying gravitational redshift.

preprint2010arXiv

Reduction of high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping

The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease of Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.

preprint2010arXiv

Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter

The high reset current IR in unipolar resistance switching now poses major obstacles to practical applications in memory devices. In particular, the first IR-value after the forming process is so high that the capacitors sometimes do not exhibit reliable unipolar resistance switching. We found that the compliance current Icomp is a critical parameter for reducing IR-values. We therefore introduced an improved, simple, easy to use Icomp-limiter that stabilizes the forming process by drastically decreasing current overflow, in order to precisely control the Icomp- and subsequent IR-values.

preprint2009arXiv

Large 1/f noise of unipolar resistance switching and its percolating nature

We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resistance R with exponent w = 1.6. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices.