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B. Ryan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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We present a novel dual-DBA allocation, with a fast P4-enabled scheduler to provide low latency upstream grant allocations. We show latency reduction of 37% and 43%, respectively, compared to standard and virtual PONs
We provide a real-time demonstration of a low-latency PON DBA mechanism, optimised for virtual PONs. Our implementation mixes P4 programmable data plane and software-based virtual DBA to provide efficient fast-track allocation for low latency applications
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers prepared by metal-organic chemical vapor deposition. Using the variable stripe technique, the observation of the stimulated emission has been demonstrated through characteristic features of threshold behavior of emission intensity as functions of pump intensity, excitation length, and spectral linewidth narrowing. Using the variable stripe setup, the optical gain up to 75 cm-1 has been obtained in the GaN:Er epilayers. The near infrared lasing from GaN semiconductor opens up new possibilities for extended functionalities and integration capabilities for optoelectronic devices.