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B. Noheda

B. Noheda appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.app-phastro-ph.IM

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Published work

8 published item(s)

preprint2021arXiv

Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices

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preprint2021arXiv

Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation

Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally by helium implantation. Our combined Raman, XRD and TEM study shows that the implantation causes an elongation of the BiFeO3 unit cell and ultimately a transition towards the so-called super-tetragonal polymorph via states with mixed phases. In addition, TEM reveals the onset of amorphization at a threshold dose that does not seem to impede the overall increase in tetragonality. The phase transition from the R-like to T-like BiFeO3 appears as first-order in character, with regions of phase coexistence and abrupt changes in lattice parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical and acoustic self-oscillations in an epitaxial oxide for neuromorphic applications

Developing materials that can lead to compact versions of artificial neurons (neuristors) and synapses (memristors) is the main aspiration of the nascent neuromorphic materials research field. Oscillating circuits are interesting as neuristors, emulating the firing of action potentials. We present room-temperature self-oscillating devices fabricated from epitaxial thin films of semiconducting TbMnO3. We show that these electrical oscillations induce concomitant mechanical oscillations that produce audible sound waves, offering an additional degree of freedom to interface with other devices. The intrinsic nature of the mechanism governing the oscillations gives rise to a high degree of control and repeatability. Obtaining such properties in an epitaxial perovskite oxide, opens the way towards combining self-oscillating properties with those of other piezoelectric, ferroelectric, or magnetic perovskite oxides to achieve hybrid neuristor-memristor functionality in compact heterostuctures.

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preprint2020arXiv

High pixel number deformable mirror concept utilizing piezoelectric hysteresis for stable shape configurations

We present the conceptual design and initial development of the Hysteretic Deformable Mirror (HDM). The HDM is a completely new approach to the design and operation of deformable mirrors for wavefront correction in advanced imaging systems. The key technology breakthrough is the application of highly hysteretic piezoelectric material in combination with a simple electrode layout to efficiently define single actuator pixels. The set-and-forget nature of the HDM, which is based on the large remnant deformation of the newly developed piezo material, facilitates the use of time division multiplexing (TDM) to address the single pixels without the need for high update frequencies to avoid pixel drift. This, in combination with the simple electrode layout, paves the way for upscaling to extremely high pixel numbers ($\geq 128\times 128$) and pixel density ($100/mm^2$) deformable mirrors (DMs), which is of great importance for high spatial frequency wavefront correction in some of the most advanced imaging systems in the world.

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preprint2019arXiv

BaTiO3 thin films as transitional ferrroelectrics with giant dielectric response

Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelectric-ferroelectric critical temperature. The flat energy landscapes close to these PTs give rise to polarization rotation under external stimuli, being responsible for the best piezoelectrics so far and a their huge market. But this approach requires complex chemistry to achieve temperature-independent PT boundaries and often involves lead-containing compounds. Here we report that such a bridging state is possible in thin films of chemically simple materials such as BaTiO3. A coexistence of tetragonal, orthorhombic and their bridging low-symmetry phases are shown to be responsible for the continuous vertical polarization rotation, recreating a smear in-transition state and leading to giant temperature-independent dielectric response. These features are distinct from those of single crystals, multi-domain crystals, ceramics or relaxor ferroelectrics, requiring a different description. We believe that other materials can be engineered in a similar way to form a class of ferroelectrics, in which MPB solid solutions are also included, that we propose to coin as transitional ferroelectrics.

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preprint2011arXiv

Conduction through 71o domain walls in BiFeO3 thin films

Local conduction at domains and domains walls is investigated in BiFeO3 thin films containing mostly 71o domain walls. Measurements at room temperature reveal conduction through 71o domain walls. Conduction through domains could also be observed at high enough temperatures. It is found that, despite the lower conductivity of the domains, both are governed by the same mechanisms: in the low voltage regime electrons trapped at defect states are temperature-activated but the current is limited by the ferroelectric surface charges; in the large voltage regime, Schottky emission takes place and the role of oxygen vacancies is that of selectively increasing the Fermi energy at the walls and locally reducing the Schottky barrier. This understanding provides the key to engineering conduction paths in oxides.

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preprint2011arXiv

Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71o domain walls. A smaller amount of 109o domain walls are also present at the boundaries between two adjacent bundles. All as-grown twin walls display enhanced conductivity with respect to the domains during local probe measurements, due to the selective lowering of the Schottky barrier between the film and the AFM tip (see S. Farokhipoor and B. Noheda, Phys. Rev. Lett. 107, 127601 (2011)). In this paper we further discuss these results and show why other conduction mechanisms are discarded. In addition we show the crucial role that oxygen vacancies play in determining the amount of conduction at the walls. This prompts us to propose that the oxygen vacancies migrating to the walls locally lower the Schottky barrier. This mechanism would then be less efficient in non-ferroelastic domain walls where one expects no strain gradients around the walls and thus (assuming that walls are not charged) no driving force for accumulation of defects.

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preprint2009arXiv

Tuning the atomic and domain structure of epitaxial films of multiferroic BiFeO3

Recent works have shown that the domain walls of room-temperature multiferroic BiFeO3 (BFO) thin films can display distinct and promising functionalities. It is thus important to understand the mechanisms underlying domain formation in these films. High-resolution x-ray diffraction and piezo-force microscopy, combined with first-principles simulations, have allowed us to characterize both the atomic and domain structure of BFO films grown under compressive strain on (001)-SrTiO3, as a function of thickness. We derive a twining model that describes the experimental observations and explains why the 71o domain walls are the ones commonly observed in these films. This understanding provides us with a new degree of freedom to control the structure and, thus, the properties of BiFeO3 thin films.

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