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B. Jelinek

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Published work

2 published item(s)

preprint2010arXiv

Temperature dependence of electrokinetic flux in Si nanochannel

Significant temperature effects on the electrokinetic transport in a nanochannel with a slab geometry are demonstrated using a molecular dynamics (MD) model. A system consisting of Na+ and Cl- ions dissolved in water and confined between fixed crystalline silicon walls with negatively charged inner surfaces in an external electric field was investigated. Lennard-Jones (LJ) force fields and Coulomb electrostatic interactions with Simple Point Charge Extended (SPC/E) model were used to represent the interactions between ions, water molecules, and channel wall atoms. Dependence of the flow of water and ions on the temperature was examined. The magnitude of the water flux and even its direction are shown to be significantly affected by temperature. In particular, the previously reported flow reversal phenomenon does not occur at higher temperature. Temperature dependence of the flux was attributed to the charge redistribution and to the changes in viscosity of water.

preprint2006arXiv

Modified embedded-atom method interatomic potentials for the Mg-Al alloy system

We developed new modified embedded-atom method (MEAM) interatomic potentials for the Mg-Al alloy system using a first-principles method based on density functional theory (DFT). The materials parameters, such as the cohesive energy, equilibrium atomic volume, and bulk modulus, were used to determine the MEAM parameters. Face-centered cubic, hexagonal close packed, and cubic rock salt structures were used as the reference structures for Al, Mg, and MgAl, respectively. The applicability of the new MEAM potentials to atomistic simulations for investigating Mg-Al alloys was demonstrated by performing simulations on Mg and Al atoms in a variety of geometries. The new MEAM potentials were used to calculate the adsorption energies of Al and Mg atoms on Al (111) and Mg (0001) surfaces. The formation energies and geometries of various point defects, such as vacancies, interstitial defects and substitutional defects, were also calculated. We found that the new MEAM potentials give a better overall agreement with DFT calculations and experiments when compared against the previously published MEAM potentials.