Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics
We report on the effect of electron and proton irradiation on effective minority carrier lifetimes () in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay (W-PCD) method. We examine the dependence of on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured before and after irradiation are used to estimate the minority carriers diffusion lengths, which is an important parameter for solar cell operation. We observe ranging from 50 to 230 s for Ge doping levels between 1E17 and 1E16 at.cm, corresponding to diffusion lengths of 500-1400 m. A separation of in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.