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B. Aktas

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Published work

4 published item(s)

preprint2007arXiv

Ferrimagnetism and antiferromagnetism in half-metallic Heusler alloys

Half-metallic Heusler alloys are among the most promising materials for future applications in spintronic devices. Although most Heusler alloys are ferromagnets, ferrimagnetic or antiferromagnetic (also called fully-compensated ferrimagnetic) alloys would be more desirable for applications due to the lower external fields. Ferrimagnetism can be either found in perfect Heusler compounds or achieved through the creation of defects in ferromagnetic Heusler alloys.

preprint2006arXiv

Doping and disorder in the Co$_2$MnAl and Co$_2$MnGa half-metallic Heusler alloys

We expand our study on the full-Heusler compounds [I. Galanakis \textit{et al.}, Appl. Phys. Lett. \textbf{89}, 042502 (2006)] to cover also the case of doping and disorder in the case of Co$_2$MnAl and Co$_2$MnGa half-metallic Heusler alloys. These alloys present a region of very small minority density of states instead of a real gap. Electronic structure calculations reveal that doping with Fe and Cr in the case of Co$_2$MnAl retains the half-metallicity contrary to the Co$_2$MnGa compound. Cr impurities present an unusual behavior and the spin moment of the Cr impurity scales almost linearly with the concentration of Cr atoms contrary to the Co$_2$MnZ (Z= Si, Ge, Sn) where it was almost constant. Half-metallicity is no more preserved for both Co$_2$MnAl and Co$_2$MnGa alloys when disorder occurs and there is either excess of Mn or $sp$ atoms.

preprint2006arXiv

Influence of mixing the low-valent transition metal atoms (Y,Y$^*$=Cr,Mn,Fe) on the properties of the quaternary Co$_2$[Y$_{1-x}$Y$^*_x$]Z (Z=Al,Ga,Si,Ge,Sn) Heusler compounds

We complement our study on the doping and disorder in Co$_2$MnZ compounds [I. Galanakis \textit{et al.}, Appl. Phys. Lett. \textbf{89}, 042502 (2006) and K. Özdogan \textit{et al.}, Phys. Rev. B \textbf{74}, (2006)] to cover also the quaterarny Co$_2$[Y$_{1-x}$Y$^*_x$]Z compounds with the lower-valent transition metals Y,Y$^*$ being Cr, Mn or Fe and the sp atom Z being one of Al, Ga, Si, Ge, Sn. This study gives a global overview of the magnetic and electronic properties of these compounds since we vary both Y and Z elements. Our results suggest that for realistic applications the most appropriate compounds are the ones belonging to the families Co$_2$[Mn$_{1-x}$Cr$_x$]Z with $x>0.5$ irrespectively of the nature of the $sp$ atoms since they combine high values of majority DOS at the Fermi level due to the presence of Cr, and half-metallicity with large band-gaps. On the other hand the presence of Fe lowers considerably the majority density of states at the Fermi level and when combined with an element belonging to the Si-column, it even can destroy half-metallicity.

preprint2006arXiv

Role of the presence of transition-metal atoms at the antisites in CrAs, CrSe and VAs zinc-blende compounds

In a recent publication [Galanakis I et al 2006 \PR B \textbf{74} 140408(R)] we have shown that in the case of CrAs and related transition-metal chalcogenides and pnictides, crystallizing in the zinc-blende structure, the excess of the transition-metal atoms leads to half-metallic ferrimagnetism. The latter property is crucial for spintronic applications with respect to ferromagnets due to the lower stray fields created by these materials. We extend this study to cover the case where the transition-metal atoms sitting at antisites are not identical to the ones in the perfect sites. In Cr-based compounds, the creation of Mn antisites keeps the half-metallic ferrimagnetic character produced also by the Cr antisites. In the case of VAs, Cr and Mn antisites keep the half-metallic character of VAs (contrary to V antisites) due to the larger exchange-splitting exhibited by these atoms.