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Ather Mahmood

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2023arXiv

Nanoscale imaging of antiferromagnetic domains in epitaxial films of Cr2O3 via scanning diamond magnetic probe microscopy

We report direct imaging of boundary magnetization associated with antiferromagnetic domains in magnetoelectric epitaxial Cr2O3 thin films using diamond nitrogen vacancy microscopy. We found a correlation between magnetic domain size and structural grain size which we associate with the domain formation process. We performed field cooling, i.e., cooling from above to below the Néel temperature in the presence of magnetic field, which resulted in the selection of one of the two otherwise degenerate 180 degree domains. Lifting of such a degeneracy is achievable with a magnetic field alone due to the Zeeman energy of a weak parasitic magnetic moment in Cr2O3 films that originates from defects and the imbalance of the boundary magnetization of opposing interfaces. This boundary magnetization couples to the antiferromagnetic order parameter enabling selection of its orientation. Nanostructuring the Cr2O3 film with mesa structures revealed reversible edge magnetic states with the direction of magnetic field during field cooling.

preprint2015arXiv

Distance Dependence of the Energy Transfer Rate From a Single Semiconductor Nanostructure to Graphene

The near-field Coulomb interaction between a nano-emitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, i) zero-dimensional CdSe/CdS nanocrystals and ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing distances $d$, the energy transfer rate from individual nanocrystals to graphene decays as $1/d^4$. In contrast, the distance dependence of the energy transfer rate from a two-dimensional nanoplatelet to graphene deviates from a simple power law, but is well described by a theoretical model, which considers a thermal distribution of free excitons in a two-dimensional quantum well. Our results show that accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers and that energy transfer allows probing dimensionality effects at the nanoscale.

preprint2013arXiv

Epitaxial graphene morphologies probed by weak (anti)-localization

We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].

preprint2010arXiv

Production, properties and potential of graphene

This review on graphene, a one atom thick, two-dimensional sheet of carbon atoms, starts with a general description of the graphene electronic structure as well as a basic experimental toolkit for identifying and handling this material. Owing to the versatility of graphene properties and projected applications, several production techniques are summarized, ranging from the mechanical exfoliation of high quality graphene to the direct growth on carbides or metal substrates and from the chemical routes using graphene oxide to the newly developed approach at the molecular level. The most promising and appealing properties of graphene are summarized from an exponentially growing literature, with a particular attention to matching production methods to characteristics and to applications. In particular, we report on the high carrier mobility value in suspended and annealed samples for electronic devices, on the thickness-dependent optical transparency and, in the mechanical section, on the high robustness and full integration of graphene in sensing device applications. Finally, we emphasize on the high potential of graphene not only as a post-silicon materials for CMOS device application but more ambitiously as a platform for post-CMOS molecular architecture in electronic information processing.

preprint2008arXiv

Side-gated transport in FIB-fabricated multilayered graphene nanoribbons

In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected and patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB) lithography and deposition. The electronic transport properties of the double side-gated nanoribbons are then investigated down to 40 K and interpreted with a simple model of 1D array of tunnelling junctions.