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Ashutosh Upadhyay

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Published work

3 published item(s)

preprint2022arXiv

An integrated Auto Encoder-Block Switching defense approach to prevent adversarial attacks

According to recent studies, the vulnerability of state-of-the-art Neural Networks to adversarial input samples has increased drastically. A neural network is an intermediate path or technique by which a computer learns to perform tasks using Machine learning algorithms. Machine Learning and Artificial Intelligence model has become a fundamental aspect of life, such as self-driving cars [1], smart home devices, so any vulnerability is a significant concern. The smallest input deviations can fool these extremely literal systems and deceive their users as well as administrator into precarious situations. This article proposes a defense algorithm that utilizes the combination of an auto-encoder [3] and block-switching architecture. Auto-coder is intended to remove any perturbations found in input images whereas the block switching method is used to make it more robust against White-box attacks. The attack is planned using FGSM [9] model, and the subsequent counter-attack by the proposed architecture will take place thereby demonstrating the feasibility and security delivered by the algorithm.

preprint2014arXiv

Electronic structure and stability of hydrogen defects in diamond and boron doped diamond: A density functional theory study

Isolated hydrogen and hydrogen pairs in bulk diamond matrix have been studied using density functional theory calculations. The electronic structure and stability of isolated and paired hydrogen defects are investigated at different possible lattice sites in pure diamond and boron doped diamond. Calculations revealed that isolated hydrogen defect is stable at bond center sites for pure diamond and bond center puckered site for boron doped diamond. In case of hydrogen pairs, H2 defect (one hydrogen at bond center and second at anti-bonding site) is stable for pure diamond, while for boron doped diamond B-H2BC complex (one H atom at the B-C bond centered puckered position and the other one at the puckered position of one of the C-C bond first neighbor of the B atom) is most stable. Multiple hydrogen trapping sites in boron doped diamond has also been studied. Calculated results are discussed and compared with previously reported theoretical results in detailed.

preprint2013arXiv

Phase Coexistence and the Structure of the Morphotropic Phase Boundary Region in (1-x)Bi(Mg1/2Zr1/2)O3-xPbTiO3 Piezoceramics

Structure of the morphotropic phase and the phase coexistence region has been investigated in (1-x)Bi(Mg1/2Zr1/2)O3-xPbTiO3 ceramics. The structure is cubic with space group Pm3m for the compositions with x<0.57 and tetragonal with space group P4mm for the compositions with x>0.59. For the compositions with 0.56<x<0.60, both the tetragonal and cubic phases coexist, which suggest very narrow morphotropic phase boundary region of compositional width Δx~0.03. Rietveld refinement of the structure using x-ray diffraction data confirms coexistence of the tetragonal and cubic phases in the MPB region and rules out the coexistence of tetragonal and rhombohedral structure reported by earlier workers. After poling appearance of significant value of electromechanical coupling coefficient in the cubic compositions (x=0.55, 0.56) suggests the presence of electric field induced transition from centrosymmetric cubic phase to noncentrosymmetric phase. Polarization- Electric field hysteresis loop measurement on the cubic composition with x=0.56 gives well saturated loop similar to that observed in Pb(Mg1/3Nb2/3)O3 relaxor below the freezing temperature.