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Artis Svilans

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cond-mat.mes-hall

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preprint2020arXiv

Heat driven transport in serial double quantum dot devices

Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation of fundamental thermodynamic concepts and the realization of thermal energy harvesters. We study a serial double quantum dot formed in an InAs/InP nanowire coupled to two electron reservoirs. By means of a specially designed local metallic joule-heater, the temperature of the phonon bath in the vicinity of the double quantum dot can be enhanced. This results in phonon-assisted transport, enabling the conversion of local heat into electrical power in a nano-sized heat engine. Simultaneously, the electron temperatures of the reservoirs are affected, resulting in conventional thermoelectric transport. By detailed modelling and experimentally tuning the interdot coupling we disentangle both effects. Furthermore, we show that phonon-assisted transport gives access to the energy of excited states. Our findings demonstrate the versatility of our design to study fluctuations and fundamental nanothermodynamics.

preprint2016arXiv

Experiments on thermoelectric properties of quantum dots

Quantum dots (QDs) are good model systems for fundamental studies of mesoscopic transport phenomena using thermoelectric effects because of their small size, electrostatically tunable properties and thermoelectric response characteristics that are very sensitive to small thermal biases. Here we provide a review of experimental studies on thermoelectric properties of single QDs realized in two-dimensional electron gases, single-walled carbon nanotubes and semiconductor nanowires. A key requirement for such experiments is methods for nanoscale thermal biasing. We briefly review the main techniques used in the field, namely, heating of the QD contacts, side heating and top heating, and touch upon their relative advantages. The thermoelectric response of a QD as a function of gate potential has a characteristic oscillatory behavior with the same period as is observed for conductance peaks. Much of the existing literature focuses on the agreement between experiments and theory, particularly for amplitude and line-shape of the thermovoltage $V_{th}$. A general observation is that the widely used single-electron tunneling approximation for QDs has limited success in reproducing measured $V_{th}$. Landauer-type calculations are often found to describe measurement results better despite the large electron-electron interactions in QDs. More recently, nonlinear thermoelectric effects have moved into the focus of attention and we offer a brief overview of experiments done so far. We conclude by discussing open questions and avenues for future work, including the role of asymmetries in tunnel- and capacitive couplings in thermoelectric behavior of QDs.

preprint2015arXiv

Nonlinear thermoelectric response due to energy-dependent transport properties of a quantum dot

Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been challenging to observe because, first, it is experimentally difficult to apply a sufficiently large thermal bias at the nanoscale and, second, it is difficult to distinguish thermal bias effects from purely temperature-dependent effects due to overall heating of a device. Here we take advantage of a novel thermal biasing technique and demonstrate a nonlinear thermoelectric response in a quantum dot which is defined in a heterostructured semiconductor nanowire. We also show that a theoretical model based on the Master equations fully explains the observed nonlinear thermoelectric response given the energy-dependent transport properties of the quantum dot.