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Researcher profile

Armando Pezo

Armando Pezo contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Influence of the surface states on the nonlinear Hall effect in Weyl semimetals

We investigate the influence of surface states on the nonlinear Hall response of non-centrosymmetric time-reversal invariant Weyl semimetals. To do so, we perform a tomography of the Berry curvature dipole in a slab system using a minimal two-band model. We find that in the type-I phase, the nonlinear Hall response is not particularly sensitive to the presence of Fermi arcs or other trivial surface states. However, in the type-II phase, we find that these surface states contribute substantially to the Berry curvature dipole, leading to a strong thickness dependence of the nonlinear Hall response. This feature depends on the nature of the surface states and, henceforth, on the slab geometry adopted. In order to assess the validity of this scenario for realistic systems, we performed Berry curvature dipole calculations by first principles on the WTe$_2$, confirming the dramatic impact of surface states for selected slab geometries. Our results suggest that surface states, being topological or not, can contribute much more efficiently to the nonlinear Hall response than bulk states. This prediction is not limited to topological semimetals and should apply to topologically trivial non-centrosymmetric materials and heterostructures, paving the way to interfacial engineering of the nonlinear Hall effect.

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preprint2021arXiv

Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene

The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium Green's functions methods to study the effect of disorder in the electronic transport of long nanoribbons, up to 157 nm, as a function of vacancy concentration. In narrow nanoribbons, even for small vacancy concentrations, defect-like localized states give rise to hybridization between the edge states erasing topological protection and enabling backscattering events. We show that the topological protection is more robust for wide nanoribbons, but surprisingly it breaks down at moderate structural disorder. Our study helps to establish some bounds on defective bismuthene nanoribbons as promising candidates for spintronic applications.

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preprint2021arXiv

Manipulation of Spin Transport in Graphene/Transition Metal Dichalcogenide Heterobilayers upon Twisting

Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and interfacial properties. Here we used large-scale first-principle calculations to demonstrate that strain and twist-angle are efficient knobs to tailor the spin-orbit coupling in graphene transition metal dichalcogenide heterobilayers. We found that by choosing a twist-angle of 30 degrees, the spin relaxation times increase by two orders of magnitude, opening a path to improve these heterostructures spin transport capability. Moreover, we demonstrate that strain and twist angle will modify the relative values of valley-Zeeman and Rashba spin-orbit coupling, allowing to tune the system into an ideal Dirac-Rashba regime. These results enable us to envision an answer for the variability of spin-orbit coupling found in different experiments and have significant consequences for applications that depend on polycrystallinity, where grains form at different orientations.

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preprint2020arXiv

Dual Topological Insulator Device with Disorder Robustness

Two-dimensional Na$_3$Bi is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for devices design. However, in reality, the design of topological devices is hindered by a sensitivity against disorder and temperature. We study the topological properties of Na$_3$Bi in the presence of intrinsic defects, investigating the robustness of the edge states and the resulting transport properties. We apply a recursive Green's function technique enabling the study of disordered systems with lengths comparable to experimentally synthesized materials, in the order of micrometers. We combine our findings to propose a topological insulator device, where intrinsic defects are used to filter the response of trivial bulk states. This results in a stable conductance throughout a large range of electronic temperatures, and controllable by a perpendicular electric field. Our proposal is general, enabling the design of various dual topological insulators devices.

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