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Arjun Mani

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Published work

4 published item(s)

preprint2022arXiv

Point and Ask: Incorporating Pointing into Visual Question Answering

Visual Question Answering (VQA) has become one of the key benchmarks of visual recognition progress. Multiple VQA extensions have been explored to better simulate real-world settings: different question formulations, changing training and test distributions, conversational consistency in dialogues, and explanation-based answering. In this work, we further expand this space by considering visual questions that include a spatial point of reference. Pointing is a nearly universal gesture among humans, and real-world VQA is likely to involve a gesture towards the target region. Concretely, we (1) introduce and motivate point-input questions as an extension of VQA, (2) define three novel classes of questions within this space, and (3) for each class, introduce both a benchmark dataset and a series of baseline models to handle its unique challenges. There are two key distinctions from prior work. First, we explicitly design the benchmarks to require the point input, i.e., we ensure that the visual question cannot be answered accurately without the spatial reference. Second, we explicitly explore the more realistic point spatial input rather than the standard but unnatural bounding box input. Through our exploration we uncover and address several visual recognition challenges, including the ability to infer human intent, reason both locally and globally about the image, and effectively combine visual, language and spatial inputs. Code is available at: https://github.com/princetonvisualai/pointingqa .

preprint2019arXiv

Disordered contacts can localize chiral edge electrons

Chiral integer quantum Hall (QH) edge modes are immune to backscattering and therefore are non-localized and show a vanishing longitudinal as well as non-local resistance along with quantized 2-terminal and Hall resistance even in the presence of sample disorder. However, this is not the case for contact disorder, which refers to the possibility that a contact can reflect edge modes either partially or fully. This paper shows that when all contacts are disordered in a N-terminal quantum Hall bar, then transport via chiral QH edge modes can have a significant localization correction. The Hall and 2-terminal resistance in an N-terminal quantum Hall sample deviate from their values derived while neglecting the phase acquired at disordered contacts, and this deviation is called the quantum localization correction. This correction term increases with the increase of disorderedness of contacts but decreases with the increase in the number of contacts in an N-terminal Hall bar. The presence of inelastic scattering, however, can completely destroy the quantum localization correction.

preprint2016arXiv

Are quantum spin Hall edge modes more resilient to disorder, sample geometry and inelastic scattering than quantum Hall edge modes?

On the surface of 2D Topological insulators occur 1D quantum spin Hall(QSH) edge modes with Dirac like dispersion. Unlike quantum Hall(QH) edge modes which occur at high magnetic fields in 2DEGs, the occurrence of QSH edge modes is because of spin-orbit scattering in the bulk of the material. These QSH edge modes are spin dependent and chiral- opposite spins move in opposing directions. Electronic spin has larger decoherence and relaxation time than charge- in view of this its expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes which are charge dependent and spin unpolarized. However, we notice no such advantage accrues to QSH edge modes when subjected to same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Further, while a single disordered contact has no effect on QH edge modes it leads to a finite charge Hall current in case of quantum spin Hall edge modes and thus vanishing of pure quantum spin Hall effect. For more than a single disordered contact while quantum Hall states continue to remain immune to disorder, quantum spin Hall edge modes become more susceptible- the Hall resistance for quantum spin Hall effect changes sign with increasing disorder. In case of many disordered contacts with inelastic scattering included while quantization of Hall edge modes holds, for quantum spin Hall edge modes- a finite charge Hall current still flows. For quantum spin Hall edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect on quantum spin Hall case it has no impact in quantum Hall case.

preprint2016arXiv

Fragility of non-local edge mode transport in the quantum spin Hall state

Non-local currents and voltages are better able at withstanding the deleterious effects of dephasing than local currents and voltages in nanoscale systems. This hypothesis is known to be true in quantum Hall set-ups. We test this hypothesis in a four terminal quantum spin Hall set up wherein we compare the local resistance measurement with the non-local one. In addition to inelastic scattering induced dephasing we also test resilience of the resistance measurements in the aforesaid set-ups to disorder and spin-flip scattering. We find the axiom that non-local resistance is less affected by the detrimental effects of disorder and dephasing to be in general untrue for quantum spin Hall case. This has important consequences since it has been widely communicated that non-local transport through edge channels in topological insulators will have potential applications in low power information processing.