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Anxiang Yin

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2015arXiv

Electric field induced strong enhancement of electroluminescence in multi-Layer MoS2

The layered transition metal dichalcogenides (TMDs) have attracted considerable interest due to their unique electronic and optical properties. Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2. We show that GaN-Al2O3-MoS2 and GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunctions can be created with excellent rectification behaviour. Electroluminescence studies demonstrate prominent direct bandgap excitonic emission in multi-layer MoS2 over the entire vertical junction area. Importantly, the electroluminescence efficiency observed in multi-layer MoS2 is comparable to or even higher than that in monolayers, corresponding to a relative electroluminescence enhancement factor of >1000 in multi-layer MoS2 when compared to its photoluminescence. This striking enhancement of electroluminescence can be attributed to the high electric field induced carrier redistribution from low energy points (indirect bandgap) to high energy points (direct bandgap) of k-space, arising from the unique band structure of MoS2 with a much higher density of states at high energy points. The electric field induced electroluminescence is general for other TMDs including WSe2, and can provide a fundamental platform to probe the carrier injection, population and recombination in multi-layer TMDs and open up a new pathway toward TMD based optoelectronic devices.

preprint2015arXiv

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.

preprint2014arXiv

Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes

The p-n diodes represent the most fundamental device building block for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the inability to selectively dope them into p- or n-type semiconductors. Here we report the first demonstration of an atomically thin and atomically sharp heterojunction p-n diode by vertically stacking p-type monolayer tungsten diselenide (WSe2) and n-type few-layer molybdenum disulfide (MoS2). Electrical measurement demonstrates excellent diode characteristics with well-defined current rectification behaviour and an ideality factor of 1.2. Photocurrent mapping shows fast photoresponse over the entire overlapping region with a highest external quantum efficiency up to 12 %. Electroluminescence studies show prominent band edge excitonic emission and strikingly enhanced hot electron luminescence. A systematic investigation shows distinct layer-number dependent emission characteristics and reveals important insight about the origin of hot-electron luminescence and the nature of electron-orbital interaction in TMDs. We believe that these atomically thin heterojunction p-n diodes represent an interesting system for probing the fundamental electro-optical properties in TMDs, and can open up a new pathway to novel optoelectronic devices such as atomically thin photodetectors, photovoltaics, as well as spin-/valley-polarized light emitting diodes and on-chip lasers.