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Antti Puska

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Published work

3 published item(s)

preprint2016arXiv

Cross correlations in disordered, four-terminal graphene-ribbon conductor: Hanbury-Brown and Twiss exchange as a sign of non-universality of noise

We have investigated current-current correlations in a cross-shaped conductor made of graphene ribbons. We measured auto and cross correlations and compared them with the theoretical predictions for ideal diffusive conductors. Our data deviate from these predictions and agreement can be obtained only by adding contributions from occupation-number noise in the central region connecting the arms of the cross. Furthermore, we have determined Hanbury -- Brown and Twiss (HBT) exchange correlations in this system. Contrary to expectations for a cross-shaped diffusive system, we find finite HBT exchange effects due to the occupation-number noise at the crossing. The strength of these HBT exchange correlations is found to vary with gate voltage, and very a distinct HBT effect with large fluctuations is observed near the Dirac point.

preprint2013arXiv

Differential Bloch Oscillating Transistor Pair

We examine a Bloch Oscillating Transistor pair as a differential stage for cryogenic low-noise measurements. Using two oppositely biased, nearly symmetric Bloch Oscillating Transistors, we measured the sum and difference signals in the current gain and transconductance modes while changing the common mode signal, either voltage or current. From the common mode rejection ratio we find values $\sim 20$ dB even under non-optimal conditions. We also characterize the noise properties and obtain excellent noise performance for measurements having source impedances in the M$Ω$ range.

preprint2013arXiv

Dynamics of Bloch oscillating transistor near bifurcation threshold

Tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. Bloch oscillating transistor is such a device. Here we show that bistable behaviour can be approached by tuning the base current and that the critical value depends on the Josephson coupling energy $E_J$ of the device. We demonstrate record-large current gains for device operation near the bifurcation point at small $E_J$. From our results for the current gains at various $E_J$, we determine the bifurcation threshold on the $E_J$ - base current plane. The bifurcation threshold curve can be understood using the interplay of inter- and intra-band tunneling events.