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Antoine Fleurence

Antoine Fleurence appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2020arXiv

Bandgap engineering in an epitaxial two-dimensional honeycomb Si$_{6-x}$Ge$_x$ alloy

In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si$_5$Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB$_2$(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si$_{6-x}$Ge$_{x}$ alloy (with $x$ between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with $x$ observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the bandgap in 2D SiGe alloys in a way that is similar for their bulk counterpart.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

First-principles study on the stability and electronic structure of monolayer GaSe with trigonal-antiprismatic structure

The structural stability and electronic states of GaSe monolayer with trigonal-antiprismatic (AP) structure, which is a recently discovered new polymorph, were studied by first-principles calculations. The AP phase GaSe monolayer was found stable, and the differences in energy and lattice constant were small when compared to those calculated for a GaSe monolayer with conventional trigonal-prismatic (P) structure which was found to be the ground state. Moreover, it was revealed that the relative stability of P phase and AP phase GaSe monolayers reverses under tensile strain. These calculation results provide insight into the formation mechanism of AP phase GaSe monolayers in epitaxially-grown GaSe thin films.

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preprint2014arXiv

Avoiding critical-point phonon instabilities in two-dimensional materials: The origin of the stripe formation in epitaxial silicene

The origin of the large-scale stripe pattern of epitaxial silicene on the ZrB$_2$(0001) surface observed by scanning tunneling microscope experiments is revealed by first-principles calculations. Without stripes, the ($\sqrt{3}\times\sqrt{3}$)-reconstructed, one-atom-thick Si layer is found to exhibit a "zero-frequency" phonon instability at the $M$ point. In order to avoid a divergent response, the relevant phonon mode triggers the spontaneous formation of a new phase with a particular stripe pattern offering a way to lower both the atomic surface density and the total energy of silicene on the particular substrate. The observed mechanism is a way for the system to handle epitaxial strain and may therefore be more common in two-dimensional epitaxial materials exhibiting a small lattice mismatch with the substrate.

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preprint2014arXiv

Band structure of silicene on the zirconium diboride (0001) thin film surface - convergence of experiment and calculations in the one-Si-atom Brillouin zone

So far, it represents a challenging task to reproduce angle-resolved photoelectron (ARPES) spectra of epitaxial silicene by first-principles calculations. Here, we report on the resolution of the previously controversial issue related to the structural configuration of silicene on the ZrB$_2$(0001) surface and its band structure. In particular, by representing the band structure in a large Brillouin zone associated with a single Si atom, it is found that the imaginary part of the one-particle Green's function follows the spectral weight observed in ARPES spectra. By additionally varying the in-plane lattice constant, the results of density functional theory calculations and ARPES data obtained in a wide energy range converge into the "planar-like" phase and provide the orbital character of electronic states in the vicinity of the Fermi level. It is anticipated that the choice of a smaller commensurate unit cell for the representation of the electronic structure will be useful for the study of epitaxial two-dimensional materials on various substrates in general.

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preprint2013arXiv

Diverse forms of $σ$ bonding in two-dimensional Si allotropes: Nematic orbitals in the $MoS_2$ structure

The interplay of $sp^2$- and $sp^3$-type bonding defines silicon allotropes in two- and three-dimensional forms. A novel two-dimensional phase bearing structural resembleance to a single MoS$_2$ layer is found to possess a lower total energy than low-buckled silicene and to be stable in terms of its phonon dispersion relations. A new set of cigar-shaped, nematic orbitals originating from the Si $sp^2$ orbitals realizes bonding with a 6-fold coordination of the inner Si atoms of the layer. The identification of these nematic orbitals advocates diverse Si bonding configurations different from those of C atoms.

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preprint2013arXiv

First-principles study on competing phases of silicene: Effect of substrate and strain

The stability and electronic structure of competing silicene phases under in-plane compressive stress, either free-standing or on the ZrB$_2$(0001) surface, has been studied by first-principles calculations. A particular ($\sqrt{3}\times\sqrt{3}$)-reconstructed structural modification was found to be stable on the ZrB$_2$(0001) surface under epitaxial conditions. In contrast to the planar and buckled forms of free-standing silicene, in this "planar-like" phase, all but one of the Si atoms per hexagon reside in a single plane. While without substrate, for a wide range of strain, this phase is energetically less favorable than the buckled one, it is calculated to represent the ground state on the ZrB$_2$(0001) surface. The atomic positions are found to be determined by the interactions with the nearest neighbor Zr atoms competing with Si-Si bonding interactions provided by the constraint of the honeycomb lattice.

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