Researcher profile

Anthony McCormick

Anthony McCormick contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci math-ph math.AP math.MP

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preprint2022arXiv

A Trace Formula on Stationary Kaluza-Klein Spacetimes

We prove relativistic versions of the ladder asymptotics from V. Guillemin and A. Uribe [Journal of Differential Geometry, 32(2):315-347, 1990] on principal bundles over globally hyperbolic, stationary, spatially compact spacetimes equipped with a Kaluza-Klein metric. This involves understanding the distribution of the frequency spectrum for the wave equation on a Kaluza-Klein spacetime when restricted to the isotypic subspace of an irreducible representation of the structure group, in the limit that the weight of the representation approaches infinity in the Weyl chamber. This is a direct generalization of the results from A. Strohmaier and S. Zelditch [Indagationes Mathematicae 32 (2021), 323-363] and is closely related to Strohmaier-Zelditch [Advances in Mathematics, Volume 376, 2021, 107434] and O. Islam arXiv:2109.09219. Furthermore we show how to apply these results to frequency asymptotics for the massive Klein-Gordon equation on vector bundles as one takes the representation defining the vector bundle to infinity.

preprint2011arXiv

Real-time Measurement of Stress and Damage Evolution During Initial Lithiation of Crystalline Silicon

Crystalline to amorphous phase transformation during initial lithiation in (100) silicon-wafers is studied in an electrochemical cell with lithium metal as the counter and reference electrode. It is demonstrated that severe stress jumps across the phase boundary lead to fracture and damage, which is an essential consideration in designing silicon based anodes for lithium ion batteries. During initial lithiation, a moving phase boundary advances into the wafer starting from the surface facing the lithium electrode, transforming crystalline silicon into amorphous LixSi. The resulting biaxial compressive stress in the amorphous layer is measured in situ and it was observed to be ca. 0.5 GPa. HRTEM images reveal that the crystalline-amorphous phase boundary is very sharp, with a thickness of ~ 1 nm. Upon delithiation, the stress rapidly reverses, becomes tensile and the amorphous layer begins to deform plastically at around 0.5 GPa. With continued delithiation, the yield stress increases in magnitude, culminating in sudden fracture of the amorphous layer into micro-fragments and the cracks extend into the underlying crystalline silicon.