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Annabella Selloni

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cond-mat.mtrl-sci

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preprint2019arXiv

Selective control of localised vs. delocalised carriers in anatase TiO2 through reaction with O2

Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. We used Angle Resolved Photoelectron Spectroscopy combined with density functional theory to study the reactivity of states induced by the oxygen vacancies at the (001)-(1x4) surface of anatase TiO2, where both 2D metallic and deeper lying in-gap states (IGs) are observed. Remarkably, the two states exhibit very different evolution when the surface is exposed to molecular O2: while IGs are almost completely quenched, the metallic states are only weakly affected. The energy scale analysis for the vacancy migration and recombination resulting from the DFT calculations confirms indeed that only the IGs originate from and remain localized at the surface, whereas the metallic states originate from subsurface vacancies, whose migration and recombination at the surface is energetically less favorable rendering them therefore insensitive to oxygen dosing.

preprint2012arXiv

Electronic states and magnetic structure at the Co3O4 (110) surface: a first principles study

Tricobalt tetraoxide (Co3O4) is an important catalyst and Co3O4(110) is a frequently exposed surface in Co3O4 nanomaterials. We employed Density-functional theory with on-site Coulomb repulsion U term to study the atomic structures, energetics, magnetic and electronic properties of the two possible terminations, A and B, of this surface. These calculations predict A as the stable termination in a wide range of oxygen chemical potentials, consistent with recent experimental observations. The Co3+ ions do not have a magnetic moment in the bulk, but become magnetic at the surface, which leads to surface magnetic orderings different from the one in the bulk. Surface electronic states are present in the lower half of the bulk band gap and cause partial metallization of both surface terminations. These states are responsible for the charge compensation mechanism stabilizing both polar terminations. The computed critical thickness for polarity compensation is 4 layers.

preprint2012arXiv

Incorporation of Non-metal Impurities at the Anatase TiO$_2$(001)-(1$\times$4) Surface

We use first-principles calculations to investigate the adsorption and incorporation of non-metal impurities (N, C) at the anatase TiO$_2$(001)-(1$\times$4) reconstructed surface. We analyze in detail the influence of the surface structure and local strain on the impurity binding sites and incorporation pathways and identify important intermediates which facilitate impurity incorporation. We find various subsurface interstitial binding sites and corresponding surface $\rightarrow$ subsurface penetration pathways on the reconstructed surface. This surface also favors the presence of subsurface oxygen-vacancies, to which adsorbed species can migrate to form substitutional impurities. Most notably, we show that the non-exposed oxygen sites just below the surface have a key role in the incorporation of nitrogen and carbon in TiO$_2$(001).

preprint2011arXiv

Electronic structure and bonding properties of cobalt oxide in the spinel structure

The spinel cobalt oxide Co3O4 is a magnetic semiconductor containing cobalt ions in Co2+ and Co3+ oxidation states. We have studied the electronic, magnetic and bonding properties of Co3O4 using density functional theory (DFT) at the Generalized Gradient Approximation (GGA), GGA+U, and PBE0 hybrid functional levels. The GGA correctly predicts Co3O4 to be a semiconductor, but severely underestimates the band gap. The GGA+U band gap (1.96 eV) agrees well with the available experimental value (~ 1.6 eV), whereas the band gap obtained using the PBE0 hybrid functional (3.42 eV) is strongly overestimated. All the employed exchange-correlation functionals predict 3 unpaired d electrons on the Co2+ ions, in agreement with crystal field theory, but the values of the magnetic moments given by GGA+U and PBE0 are in closer agreement with the experiment than the GGA value, indicating a better description of the cobalt localized d states. Bonding properties are studied by means of Maximally Localized Wannier Functions (MLWFs). We find d-type MLWFs on the cobalt ions, as well as Wannier functions with the character of sp3d bonds between cobalt and oxygen ions. Such hybridized bonding states indicate the presence of a small covalent component in the primarily ionic bonding mechanism of this compound.

preprint2009arXiv

Hybrid density functional calculations of the band gap of Ga$_x$In$_{1-x}$N

Recent theoretical work has provided evidence that hybrid functionals, which include a fraction of exact (Hartree Fock) exchange in the density functional theory (DFT) exchange and correlation terms, significantly improve the description of band gaps of semiconductors compared with local and semilocal approximations. Based on a recently developed order-$N$ method for calculating the exact exchange in extended insulating systems, we have implemented an efficient scheme to determine the hybrid functional band gap. We use this scheme to study the band gap and other electronic properties of the ternary compound In$_{1-x}$Ga$_{x}$N using a 64-atom supercell model.