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Anirudha V. Sumant

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cond-mat.mtrl-sci physics.acc-ph cond-mat.mes-hall

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preprint2020arXiv

Demonstration of Planar Ultrananocrystalline Diamond Field Emission Source Operating in SRF Injector at 2 Kelvin

Reported here is the first demonstration of electron beam generation in an SRF TESLA 1.3 GHz gun equipped with field emission cathode when operated at 2 Kelvin. The cathode is submicron film of nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] deposited atop a Nb RRR300 cathode plug. The output current was measured to increase exponentially as a function of the cavity gradient. Our results demonstrate a feasible path toward simplified fully cryogenic SRF injector technology. One important finding is that the electron emitter made of (N)UNCD, a material long been known as a highly efficient field emission material, demonstrated a record low turn-on gradient of 0.6 MV/m. A hypothesis explaining this behavior is proposed.

preprint2014arXiv

Planar Ultrananocrystalline Diamond Field Emitter in Accelerator RF Electron Injector: Performance Metrics

A case performance study of a planar field emission cathode (FEC) based on nitrogen-incorporated ultrananocrystalline diamond, (N)UNCD, was carried out in an RF 1.3 GHz electron gun. The FEC was a 100 nm (N)UNCD film grown on a 20 mm diameter stainless steel disk with a Mo buffer layer. At surface gradients 45-65 MV/m, peak currents of 1-80 mA (equivalent to 0.3-25 mA/cm$^2$) were achieved. Imaging with two YAG screens confirmed emission from the (N)UNCD surface with (1) the beam emittance of 1.5 mm$\times$mrad/mm-rms, and (2) longitudinal FWHM and rms energy spread of 0.7% and 11% at an electron energy of 2 MeV. Current stability was tested over the course of 36$\times$10$^3$ RF pulses (equivalent to 288$\times$10$^6$ GHz oscillations).

preprint2012arXiv

Graphene-on-Diamond Devices with Enhanced Current-Carrying Capacity: Carbon sp2-on-sp3 Technology

Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO2/Si substrates reveal the breakdown current density on the order of 1 uA/nm2 (i.e. 10^8 A/cm2) which is ~100\times larger than the fundamental limit for the metals but still smaller than the maximum achieved in carbon nanotubes. We show that by replacing SiO2 with synthetic diamond one can substantially increase the current-carrying capacity of graphene to as high as ~18 uA/nm2 even at ambient conditions. Our results indicate that graphene's current-induced breakdown is thermally activated. We also found that the current carrying capacity of graphene can be improved not only on the single-crystal diamond substrates but also on an inexpensive ultrananocrystalline diamond, which can be produced in a process compatible with a conventional Si technology. The latter was attributed to the decreased thermal resistance of the ultrananocrystalline diamond layer at elevated temperatures. The obtained results are important for graphene's applications in high-frequency transistors, interconnects, transparent electrodes and can lead to the new planar sp2-on-sp3 carbon-on-carbon technology.