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Researcher profile

Anh Pham

Anh Pham contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciquant-ph

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Published work

4 published item(s)

preprint2022arXiv

Evaluating performance of hybrid quantum optimization algorithms for MAXCUT Clustering using IBM runtime environment

Quantum algorithms can be used to perform unsupervised machine learning tasks like data clustering by mapping the distance between data points to a graph optimization problem (i.e. MAXCUT) and finding optimal solution through energy minimization using hybrid quantum classical methods. Taking advantage of the IBM runtime environment, we benchmark the performance of the "Warm-Start" (ws) variant of Quantum Approximate Optimization Algorithm (QAOA) versus the standard implementation of QAOA and the variational quantum eigensolver (VQE) for unstructured clustering problems using real world dataset with respect to accuracy and execution time. Our numerical results show a strong speedup in execution time for different optimization algorithms using the IBM Qiskit Runtime architecture and increased speedup in classification accuracy in ws-QAOA algorithm

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetic measures of purity for MnBi$_2$Te$_4$

The intrinsically anti-ferromagnetic topological insulator, MnBi$_2$Te$_4$ (MBT), has garnered significant attention recently. The excitement for this layered van der Waals bonded compound stems from its potential to host numerous exotic topological quantum states. For instance, quantum anomalous Hall states are predicted for odd-layer compounds and axion insulator states for the even-layer compounds. Unfortunately, the realization of these phenomena has been hindered by experimental challenges such as the existence of negative charge carriers, i.e., electron doping, which have been linked to anti-site defects among the Mn and Bi sub-lattices. Based on high level diffusion Monte Carlo (DMC) and DMC-tuned DFT+U calculations, we provide benchmark quality results for the bulk Mn magnetization as well as for Mn$_{Bi}$ and Bi$_{Mn}$ defects. We use this information to refine and extend models that estimate the anti-site defect concentration in actual MBT samples when combined with data from magnetic susceptibility and intermediate field magnetization measurements. Our models are validated through favorable comparison with prior experimental studies that obtained both magnetic and site occupancy data. We then extend our estimates to a larger set of prior samples to identify a probable zone of low defect density that has yet to be reached in synthesis. We anticipate our theoretically based magnetic purity measures may be used as minimization targets in the cycle of refinement needed to synthesize MBT samples with low anti-site defect concentrations and more reproducible topological properties.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Large Gap Quantum Anomalous Hall Effect in a Type-I Heterostructure Between a Magnetically Doped Topological Insulator and Antiferromagnetic Insulator

Heterostructures between topological insulators (TI) and magnetic insulators represent a pathway to realize the quantum anomalous Hall effect (QAHE). Using density functional theory based systematic screening and investigation of thermodynamic, magnetic and topological properties of heterostructures, we demonstrate that forming a type-I heterostructure between a wide gap antiferromagnetic insulator Cr$_2$O$_3$ and a TI-film, such as Sb$_2$Te$_3$, can lead to pinning of the Fermi-level at the center of the gap, even when magnetically doped. Cr-doping in the heterostructure increases the gap to $\sim$ 64.5 meV, with a large Zeeman energy from the interfacial Cr dopants, thus overcoming potential metallicity due to band bending effects. By fitting the band-structure around the Fermi-level to a 4-band k.p model Hamiltonian, we show that Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ is a Chern insulator with a Chern number C = -1. Transport calculations further show chiral edge-modes localized at the top/bottom of the TI-film to be the dominant current carriers in the material. Our predictions of a large interfacial magnetism due to Cr-dopants, that coupled antiferromagnetically to the AFM substrate is confirmed by our polarised neutron reflectometry measurements on MBE grown Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructures, and is consistent with a positive exchange bias measured in such systems recently. Consequently, Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructure represents a promising platform for the development of functional topological magnetic devices, with high tunability.

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preprint2020arXiv

Designing Magnetic Topological van der Waals Heterostructure

We demonstrate a new method of designing 2D functional magnetic topological heterostructure (HS) by exploiting the vdw heterostructure (vdw-HS) through combining 2D magnet CrI$_3$ and 2D materials (Ge/Sb) to realize new 2D topological system with nonzero Chern number (C=1) and chiral edge state. The nontrivial topology originates primarily from the CrI$_3$ layer while the non-magnetic element induces the charge transfer process and proximity enhanced spin-orbit coupling. Due to these unique properties, our topological magnetic vdw-HS overcomes the weak magnetization via proximity effect in previous designs since the magnetization and topology coexist in the same magnetic layer. Specifically, our systems of bilayer CrI$_3$/Sb and trilayer CrI$_3$/Sb/CrI$_3$ exhibit different topological ground state ranging from antiferromagnetic topological crystalline insulator (C$_M$= 2) to a QAHE. These nontrivial topological transition is shown to be switchable in a trilayer configuration due to the magnetic switching from antiferromagnetism to ferromangetism in the presence an external perpendicular electric field with value as small as 0.05 eV/A. Thus our study proposes a realistic system to design switchable magnetic topological device with electric field.

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