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Andriy Nadtochiy

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2 published item(s)

preprint2016arXiv

Nonstructural acousto-injection luminescence in metalized lithium niobate wafers

We report the observations of nonstructural acousto-injection luminescence (NAIL) from tantalized LiNbO3 wafers. The samples under study are the X cut or Y cut wafers with the silver paste electrodes on opposite surfaces. The thickness is 1 to 2 mm and other linear dimensions are in the range of 2 to 25 mm. Experiments are done at room temperature in the MHz-frequency range. Mainly the fundamental shear ultrasound modes are excited in the samples. Experimentally are measured the spectra of NAIL, photo-luminescence spectra, acousto-electric properties, X Ray diffraction under NAIL. The NAIL and other effects appear above certain threshold amplitude of the acoustical strain that is about 10E-5. The involvement of the microstructural non-uniformity in the effects observed is experimentally identified by the photo-luminescence of point defects taken from different micro-regions of the samples. The data are explained in terms of the considerable acoustic stresses and piezoelectric fields that are capable injecting charge carriers from the metal contacts into a crystal.

preprint2016arXiv

Vibrations of Periodically Poled Lithium Niobate Bar with 0.3-mm Long Domains

The three dimensional vibrations in a periodically poled ZX-cut Lithium Niobate thin bar with 0.3-mm long domains are considered. The acoustical vibrations may be excited by the 1) longitudinal acousto-electric current when a radio frequency voltage is parallel to the x-axis, and 2) transverse electric field when a radio frequency voltage is parallel to the z-axis. The computations by the Final Element Method reveal all the three displacements along the x, y, and z crystallographic axes. The amplitudes may be different for two types of vibration excitations. The positions of peaks in admittance versus frequency correlate with the frequencies of maximum acoustic amplitudes. The superlattice with 0.3-mm long domains along the x-axis is fabricated in the z-cut 0.5-mm-thick wafer. The experimental data on the radio frequency admittance versus frequency is in agreement with the corresponding theoretical computations.