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Andrew D. Johnson

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cond-mat.mtrl-sci

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preprint2022arXiv

Compositional dependence of direct transition energies in Si $_x$ Ge $_{1-x-y}$ Sn $_y$ alloys lattice-matched to Ge/GaAs

Si $_x$ Ge $_{1-x-y}$ Sn $_y$ ternary alloys are a candidate material system for use in solar cells and other optoelectronic devices. We report on the direct transition energies and structural properties of Ge-rich Si $_x$ Ge $_{1-x-y}$ Sn $_y$ alloys with six different compositions up to 10 % Si and 3 % Sn, lattice-matched to Ge or GaAs substrates. The direct transitions occurring between 0.9 and 5.0 eV were investigated using spectroscopic ellipsometry (SE), and the resulting data was used to obtain the dielectric functions of the Si $_x$ Ge $_{1-x-y}$ Sn $_y$ n layer by fitting a multi-layer model. Values for the $E_0$ , $E_1$ , $Δ_1$ , $E_0'$ and $E_2$ transition energies were then found by differentiating these dielectric functions to extract the locations of critical points. Structurally, the composition of the samples was measured using energy-dispersive X-ray measurements (EDX). The lattice constants predicted from these compositions are in good agreement with reciprocal space maps obtained through X-ray diffraction (XRD). The results confirm that a 1 eV direct absorption edge can be achieved using relatively low Si and Sn fractions ( $<$ 10 % and $<$ 3 % respectively), while the higher-energy critical points show smaller shifts relative to Ge and match results previously observed or predicted in the literature.

preprint2022arXiv

Electronic and optical properties of Si $_{x}$ Ge $_{1-x-y}$ Sn $_{y}$ alloys lattice-matched to Ge

We present a combined experimental and theoretical analysis of the evolution of the near-band gap electronic and optical properties of Si $_{x}$ Ge $_{1-x-y}$ Sn $_{y}$ alloys lattice-matched to Ge and GaAs substrates. We perform photoreflectance (PR) and photoluminescence (PL) measurements on Si $_{x}$ Ge $_{1-x-y}$ Sn $_{y}$ epitaxial layers grown via chemical vapour deposition, for Si (Sn) compositions up to $x =$ 9.6% ( $y =$ 2.5%). Our measurements indicate the presence of an indirect fundamental band gap, with PL observed $\approx$ 200-250 meV lower in energy than the direct $E_0$ transition identified by PR measurements. The measured PL is Ge-like, suggesting that the alloy conduction band (CB) edge is primarily derived from the Ge L-point CB minimum. Interpretation of the PR and PL measurements is supported by atomistic electronic structure calculations. Effective alloy band structures calculated via density functional theory confirm the presence of an indirect fundamental band gap, and reveal the origin of the observed inhomogeneous broadening of the measured optical spectra as being alloy-induced band hybridisation occurring close in energy to the CB edge. To analyze the evolution of the band gap, semi-empirical tight-binding (TB) calculations are employed to enable calculations for large supercell sizes. TB calculations reveal that the alloy CB edge is hybridized in nature, consisting at low Si and Sn compositions of an admixture of Ge L-, $Γ$ - and X-point CB edge states, and confirm that the alloy CB edge retains primarily Ge L-point CB edge character. Our experimental measurements and theoretical calculations confirm a direct transition energy close to 1 eV in magnitude for Si and Sn compositions $x =$ 6.8 - 9.6% and $y =$ 1.6 - 2.2%.

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Andrew D. Johnson

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2 publications

Compositional dependence of direct transition energies in Si $_x$ Ge $_{1-x-y}$ Sn $_y$ alloys lattice-matched to Ge/GaAs

Electronic and optical properties of Si $_{x}$ Ge $_{1-x-y}$ Sn $_{y}$ alloys lattice-matched to Ge

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Andrew D. Johnson

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2 publications

Compositional dependence of direct transition energies in Six_xx​Ge1−x−y_{1-x-y}1−x−y​Sny_yy​ alloys lattice-matched to Ge/GaAs

Electronic and optical properties of Six_{x}x​Ge1−x−y_{1-x-y}1−x−y​Sny_{y}y​ alloys lattice-matched to Ge

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Compositional dependence of direct transition energies in Si $_x$ Ge $_{1-x-y}$ Sn $_y$ alloys lattice-matched to Ge/GaAs

Electronic and optical properties of Si $_{x}$ Ge $_{1-x-y}$ Sn $_{y}$ alloys lattice-matched to Ge