Source author record

Andrew Briggs

Andrew Briggs appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2016arXiv

Conductance enlargement in pico-scale electro-burnt graphene nanojunctions

Provided the electrical properties of electro-burnt graphene junctions can be understood and controlled, they have the potential to underpin the development of a wide range of future sub-10nm electrical devices. We examine both theoretically and experimentally the electrical conductance of electro-burnt graphene junctions at the last stages of nanogap formation. We account for the appearance of a counterintuitive increase in electrical conductance just before the gap forms. This is a manifestation of room-temperature quantum interference and arises from a combination of the semi-metallic band structure of graphene and a crossover from electrodes with multiple-path connectivity to single-path connectivity just prior to breaking. Therefore our results suggest that conductance enlargement prior to junction rupture is a signal of the formation of electro-burnt junctions, with a pico-scale current path formed from a single sp2-bond.

preprint2016arXiv

Interference-based molecular transistors

Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20 mV, which is a factor of six smaller than the theoretical limit for a metal-oxide-semiconductor field-effect transistor.

preprint2013arXiv

Equivalence of the Path Integral for Fermions in Cartesian and Spherical Coordinates

The path-integral calculation for the free energy of a spin-1/2 Dirac-fermion gas is performed in spherical polar coordinates for a flat spacetime geometry. Its equivalence with the Cartesian-coordinate representation is explicitly established. This evaluation involves a relevant limiting case of the fermionic path integral in a Schwarzschild background, whose near-horizon limit has been shown to be related to black hole thermodynamics.