Researcher profile

Andrew Briggs

Andrew Briggs contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.mes-hall hep-th math-ph math.MP

Trust snapshot

Quick read

Trust 15 - Baseline

3works

0followers

4topics

4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2016arXiv

Conductance enlargement in pico-scale electro-burnt graphene nanojunctions

Provided the electrical properties of electro-burnt graphene junctions can be understood and controlled, they have the potential to underpin the development of a wide range of future sub-10nm electrical devices. We examine both theoretically and experimentally the electrical conductance of electro-burnt graphene junctions at the last stages of nanogap formation. We account for the appearance of a counterintuitive increase in electrical conductance just before the gap forms. This is a manifestation of room-temperature quantum interference and arises from a combination of the semi-metallic band structure of graphene and a crossover from electrodes with multiple-path connectivity to single-path connectivity just prior to breaking. Therefore our results suggest that conductance enlargement prior to junction rupture is a signal of the formation of electro-burnt junctions, with a pico-scale current path formed from a single sp2-bond.

preprint2016arXiv

Interference-based molecular transistors

Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20 mV, which is a factor of six smaller than the theoretical limit for a metal-oxide-semiconductor field-effect transistor.

preprint2013arXiv

Equivalence of the Path Integral for Fermions in Cartesian and Spherical Coordinates

The path-integral calculation for the free energy of a spin-1/2 Dirac-fermion gas is performed in spherical polar coordinates for a flat spacetime geometry. Its equivalence with the Cartesian-coordinate representation is explicitly established. This evaluation involves a relevant limiting case of the fermionic path integral in a Schwarzschild background, whose near-horizon limit has been shown to be related to black hole thermodynamics.