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Andreas Bablich

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2015arXiv

Optimizing the Optical and Electrical Properties of Graphene Ink Thin Films by Laser-annealing

We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop casting of high-concentration graphene ink. The resulting thin films are uniform and exhibit a transparency of more than 85% at 550 nm and a sheet resistance of about 30 kΩ/sq. These values constitute an increase of 45% in transparency, a reduction of surface roughness by a factor of four and a decrease of 70% in sheet resistance compared to unannealed films.

preprint2015arXiv

Spectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors

We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n- Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene/n-Si photodiodes show a considerable responsivity of 270 mA/W within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2)/p-type silicon photodiodes.

preprint2014arXiv

Heterojunction Hybrid Devices from Vapor Phase Grown MoS$_{2}$

We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS$_{2}$ layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS$_{2}$. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.